High-Power Pulsed, In-Well-Pumped InGaP/AlGaInP Heterostructure, Semiconductor Disk Laser

Abstract

We report an investigation of a semiconductor disk laser (SDL) based on an InGaP/AlGaInP heterostructure emitting at a wavelength near 640 nm under in-well pumping by a pulsed rhodamine 6G dye laser with an emission wavelength of 601 nm. Use is made of structures with 25 quantum wells arranged in depth with a period of 193 nm. In a structure with a built-in Bragg mirror, a power of 3.5 W is reached at a wavelength of 642 nm with a slope efficiency of 7% with respect to the absorbed pump power. The achieved second harmonic power at a wavelength of 321 nm is approximately 30% of the maximum SDL power at the fundamental frequency. Under pumping above 250 W, the structure is destroyed due to strong adiabatic heating of the GaAs growth substrate. In a structure with a deposited broadband dielectric mirror, it is possible to reduce the adiabatic heating factor, implement double-pass pumping, and, accordingly, increase the supplied pump power. This makes it possible to obtain a pulse power of higher than 70 W at a wavelength of 645.5 nm with a slope efficiency of over 17%.