Mo-Han Zhang, Fei Gao, Aleksander Bach Lorentzen, Ya-Ning Ren, Ruo-Han Zhang, Xiao-Feng Zhou, Rui Dong, Shi-Wu Gao, Mads Brandbyge, Lin He
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引用次数: 0
Abstract
It has long been an ultimate goal to introduce chemical doping at the atomic level to precisely tune properties of materials. Two-dimensional materials have a natural advantage due to their high surface to volume ratio, but achieving this goal experimentally remains a huge challenge. Here, we demonstrate the ability to introduce chemical doping in graphene with atomic-level precision by controlling chemical adsorption of individual Se atoms, which are extracted from the that is underneath, at the interface of the heterostructures. Our scanning tunneling microscopy (STM) measurements, combined with first-principles calculations, reveal that individual Se atoms can chemisorb on three possible positions in graphene, which generate distinct pseudospin-mediated atomic-scale vortices in graphene. Furthermore, the chemisorbed positions of individual Se atoms can be manipulated by the STM tip, which enables us to achieve atomic-scale control of quantum interference of the pseudospin-mediated vortices in graphene. This result offers the promise of controlling properties of materials with atomic-level precision through chemical doping.
期刊介绍:
Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide.
PRB covers the full range of condensed matter, materials physics, and related subfields, including:
-Structure and phase transitions
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-Magnetism
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-Electronic structure, photonics, and metamaterials
-Semiconductors and mesoscopic systems
-Surfaces, nanoscience, and two-dimensional materials
-Topological states of matter