Cr doping-induced ferromagnetism in SnTe thin films

IF 5.4 1区物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

npj Quantum Materials Pub Date : 2024-07-21 DOI:10.1038/s41535-024-00667-x

Shanshan Liu, Enze Zhang, Zihan Li, Xiaoqian Zhang, Wenqing Liu, Awadhesh Narayan, Zhi-Gang Chen, Jin Zou, Faxian Xiu

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Abstract

Transition-metal doped topological insulators have been widely explored since the observation of quantum anomalous Hall effect (QAHE). Subsequently, the magnetic (Pb,Sn)(Te,Se) was predicted to possibly possess a high-temperature QAHE state. However, the fundamental understanding of Cr-doping-induced ferromagnetism in this system remains unclear. Here, we report the stable ferromagnetism in the high-crystalline Cr-doped SnTe films. Upon Cr doping, the magnetoconductance unveils a crossover from weak antilocalization to weak localization. Further increasing the Cr concentration to Cr_0.17Sn_0.83Te introduces a strong ferromagnetism with a Curie temperature of ~140 K. We detected a sizable spin moment m_s = 2.28 ± 0.23 μ_B/Cr and a suppressed orbital moment m_l = 0.02 μ_B/Cr. Cr dopants prefer to substitute the Sn sites and behave as divalent cations, as indicated by the experimental results and density function theory calculations. The controllable growth of magnetic SnTe thin films provides enlightenment towards the high-temperature QAHE in magnetic TCIs for the desired dissipationless transport in electronics.

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掺杂铬诱导的 SnTe 薄膜铁磁性

自从观测到量子反常霍尔效应（QAHE）以来，人们对掺杂过渡金属的拓扑绝缘体进行了广泛的探索。随后，磁性 (Pb,Sn)(Te,Se)被预测可能具有高温 QAHE 状态。然而，人们对该体系中铬掺杂诱导铁磁性的基本认识仍不清楚。在此，我们报告了掺杂铬的高晶 SnTe 薄膜中的稳定铁磁性。掺杂铬后，磁导率出现了从弱反局域化到弱局域化的交叉。我们检测到一个相当大的自旋矩 ms = 2.28 ± 0.23 μB/Cr 和一个被抑制的轨道矩 ml = 0.02 μB/Cr。实验结果和密度函数理论计算都表明，铬掺杂物倾向于取代锡位点，并表现为二价阳离子。磁性 SnTe 薄膜的可控生长为磁性 TCIs 中的高温 QAHE 提供了启示，以实现电子器件中理想的无耗散传输。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

npj Quantum Materials Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

10.60

自引率

3.50%

发文量

107

审稿时长

6 weeks

期刊介绍： npj Quantum Materials is an open access journal that publishes works that significantly advance the understanding of quantum materials, including their fundamental properties, fabrication and applications.