Influence of Cell Temperature on Theoretical Properties of InGaP/ InGaAs/Ge Triple-Junction Concentrated Solar Cells

Abstract

This study aims to analyze the accuracy of single- and double-diode models in predicting the electrical parameters of InGaP/InGaAs/Ge triple-junction solar cells as described in relevant patents under various operating conditions. This study obtained and analyzed experimental and theoretical values of the relevant electrical parameters of solar cells through a combination of experimental research and theoretical model calculations. The results indicated that the root mean square error of the short-circuit current decreased from 0.21 at 400 W/m² to 0.11 at 1000 W/m². The temperature of the two precision cut-off points for the open-circuit voltage in the single- and double-diode models increased from 34°C and 64°C at 400 W/m² to 39°C and 72°C at 1000 W/m². Additionally, for peak power and conversion efficiency, the precision cut-off temperatures of the single- and double-diode models were 56°C, 68°C, and 77°C at 400 W/m², 600 W/m², and 800 W/m², respectively. The theoretical values of the short-circuit current exceeded the corresponding experimental values. The single- and double-diode models for open-circuit voltage exhibited two accuracy cut-off points, with the single-diode model demonstrating greater accuracy within this temperature range. Similarly, the peak power and conversion efficiency models for single- and double-diodes have an accuracy cut-off point, with the double-diode model performing better at higher temperatures.