A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

IF 5.4 3区材料科学 Q2 CHEMISTRY, PHYSICAL

ACS Applied Energy Materials Pub Date : 2024-07-01 DOI:10.1088/1674-4926/24020006

Linkai Yi, Daoqun Liu, Wenzheng Cheng, Daimo Li, Guoqi Zhou, Peng Zhang, Bo Tang, Bin Li, Wenwu Wang, Yan Yang, Zhihua Li

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Abstract

Avalanche photodetectors (APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication (SACM) APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator (SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at −21 V, indicating a breakdown voltage greater than −21 V for the device. The APDs exhibit a unit-gain responsivity of 0.5 A/W at −10 V. At −15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of −10 and −25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of −15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor (LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at −21 V and −9 dBm input power reveal signal to noise ratio (SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor (CMOS) process, shows that utilizing the peaking effect at low optical power increases bandwidth.

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波导集成硅基锗雪崩光电探测器频率响应的峰值增强

具有雪崩倍增区的雪崩光电探测器（APD）对于实现光收发器的高灵敏度和高响应率至关重要。波导耦合硅基 Ge-on-Si 独立吸收、电荷和倍增（SACM）APD 因其简单的制造工艺、低光传播损耗以及在光通信中的高探测灵敏度而广受欢迎。本文介绍了在硅绝缘体（SOI）晶片上的横向 SACM 硅基 Ge-on-Si APD，其特点是在标准 8 英寸硅光子平台上 1310 纳米波长处有一个 10 μm 长、0.5 μm 宽的 Ge 层。在 -21 V 电压下，暗电流约为 38.6 μA，表明该器件的击穿电压高于 -21 V。APD 在 -10 V 时的单位增益响应率为 0.5 A/W。在 -15 V 时，其响应率分别达到 2.98 和 2.91 A/W，输入功率分别为 -10 和 -25 dBm。输入功率为 -15 dBm 时，器件的 3-dB 带宽为 15 GHz，增益为 11.68。实验结果表明，高偏置电压下的阻抗峰值归因于电感和电容（LC）电路共振，从而增强了频率响应。此外，在 -21 V 和 -9 dBm 输入功率下，20 Gbps 的眼图显示信噪比 (SNR) 为 5.30。这种横向 SACM APD 与标准互补金属氧化物半导体 (CMOS) 工艺兼容，表明在低光功率下利用峰值效应可以增加带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ACS Applied Energy Materials Materials Science-Materials Chemistry

CiteScore

10.30

自引率

6.20%

发文量

1368

期刊介绍： ACS Applied Energy Materials is an interdisciplinary journal publishing original research covering all aspects of materials, engineering, chemistry, physics and biology relevant to energy conversion and storage. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important energy applications.