The Effect of Gamma-ray (Low Energy Cs-0.660 MeV) Irradiation on the Energy Gap of CdSe Thin Films Prepared at Different Temperatures

L. Al-Taan, Suha Abdullah Najim, Jangeez M Alabbas
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Abstract

In this study, CdSe thin films were prepared by the Spray pyrolysis method at different substrate temperatures and then subjected to gamma rays from a (Cs-source) with an energy of about 0.66MeV for two hours. The impact of gamma rays on the energy gap values was examined at the temperatures mentioned above. There was a significant increase in the energy gap value by about (0.1 to 0.15)eV.
伽马射线(低能量铯-0.660 MeV)辐照对不同温度下制备的碲化镉薄膜能隙的影响
本研究采用喷雾热解法在不同的基底温度下制备了碲化镉薄膜,然后将其置于能量约为 0.66MeV 的伽马射线(铯源)下两小时。在上述温度下,研究了伽马射线对能隙值的影响。能隙值明显增加了约 (0.1 至 0.15) eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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