Solid solutions in disulfide systems Re(IV)S2–Ti(IV)S2, Re(IV)S2–Mo(IV)S2, and Re(IV)S2–W(IV)S2

E. I. Efremova, M. Lazov, M. R. Kobrin, V. V. Fomichev
{"title":"Solid solutions in disulfide systems Re(IV)S2–Ti(IV)S2, Re(IV)S2–Mo(IV)S2, and Re(IV)S2–W(IV)S2","authors":"E. I. Efremova, M. Lazov, M. R. Kobrin, V. V. Fomichev","doi":"10.32362/2410-6593-2024-19-3-258-266","DOIUrl":null,"url":null,"abstract":"Objectives. Chalcogenides of transition elements with low oxidation states, as well as their substituted derivatives, remain a poorly studied class of chemical compounds. Rhenium disulfide has many distinctive features and great application potential as a new twodimensional semiconductor. This is due to its unusual structure and unique anisotropic properties. The presence of weak interlayer bonding and a unique distorted octahedral (1T) structure suggests the possibility of creating new phases on its basis. The aim of this work is to obtain and study phases in systems Re(IV)S2–Ti(IV)S2, Re(IV)S2–Mo(IV)S2, and Re(IV)S2–W(IV)S2.Methods. The samples were obtained by high-temperature solid-phase ampoule synthesis in a vacuum. The study was carried out using X-ray phase analysis and X-ray photoelectron spectroscopy.Results. The regions of existence of solid solutions, intercalates and two-phase regions in the resulting systems were established.Diffraction patterns were obtained for the new phases and the crystal lattice parameters were calculated. Based on data relating to the binding energies of core electrons with the nucleus, the study showed the valence states of the elements after synthesis. The study also confirmed that all phases obtained as a result of synthesis contain transition elements in the oxidation state (IV).Conclusions. Intercalated solid solutions are formed in areas rich in rhenium, while in areas close to titanium and molybdenum disulfides, intercalated phases are attained. In the ReS2–WS2 system there is a region of solid solutions, including 30, 50, and 70 mol % rhenium disulfide. Their structure is a polymorphic modification of the structure of the original components. The presence of rhenium, molybdenum, and tungsten in these phases in the oxidation state (+IV) was confirmed. The data obtained on phase formation in dichalcogenide systems can be practically used in the creation of materials with unique electronic, magnetic, and optical properties with a wide range of applications.","PeriodicalId":12215,"journal":{"name":"Fine Chemical Technologies","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fine Chemical Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.32362/2410-6593-2024-19-3-258-266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Objectives. Chalcogenides of transition elements with low oxidation states, as well as their substituted derivatives, remain a poorly studied class of chemical compounds. Rhenium disulfide has many distinctive features and great application potential as a new twodimensional semiconductor. This is due to its unusual structure and unique anisotropic properties. The presence of weak interlayer bonding and a unique distorted octahedral (1T) structure suggests the possibility of creating new phases on its basis. The aim of this work is to obtain and study phases in systems Re(IV)S2–Ti(IV)S2, Re(IV)S2–Mo(IV)S2, and Re(IV)S2–W(IV)S2.Methods. The samples were obtained by high-temperature solid-phase ampoule synthesis in a vacuum. The study was carried out using X-ray phase analysis and X-ray photoelectron spectroscopy.Results. The regions of existence of solid solutions, intercalates and two-phase regions in the resulting systems were established.Diffraction patterns were obtained for the new phases and the crystal lattice parameters were calculated. Based on data relating to the binding energies of core electrons with the nucleus, the study showed the valence states of the elements after synthesis. The study also confirmed that all phases obtained as a result of synthesis contain transition elements in the oxidation state (IV).Conclusions. Intercalated solid solutions are formed in areas rich in rhenium, while in areas close to titanium and molybdenum disulfides, intercalated phases are attained. In the ReS2–WS2 system there is a region of solid solutions, including 30, 50, and 70 mol % rhenium disulfide. Their structure is a polymorphic modification of the structure of the original components. The presence of rhenium, molybdenum, and tungsten in these phases in the oxidation state (+IV) was confirmed. The data obtained on phase formation in dichalcogenide systems can be practically used in the creation of materials with unique electronic, magnetic, and optical properties with a wide range of applications.
二硫体系 Re(IV)S2-Ti(IV)S2、Re(IV)S2-Mo(IV)S2 和 Re(IV)S2-W(IV)S2 中的固溶体
目的。低氧化态过渡元素的钙化物及其取代衍生物仍然是一类研究较少的化合物。作为一种新型二维半导体,二硫化铼具有许多独特的特征和巨大的应用潜力。这是因为它具有不同寻常的结构和独特的各向异性。二硫化铼存在弱层间键和独特的扭曲八面体(1T)结构,这表明有可能在其基础上产生新的相。这项工作的目的是获得并研究 Re(IV)S2-Ti(IV)S2、Re(IV)S2-Mo(IV)S2 和 Re(IV)S2-W(IV)S2 体系中的相。样品是在真空中通过高温固相安瓿合成获得的。研究使用了 X 射线相分析和 X 射线光电子能谱。确定了所得体系中固溶体、夹杂物和两相区的存在区域,获得了新相的衍射图样并计算了晶格参数。根据核心电子与原子核结合能的相关数据,研究显示了元素合成后的价态。研究还证实,合成后得到的所有相都含有氧化态(IV)的过渡元素。在富含铼的区域形成了插层固溶体,而在靠近二硫化钛和二硫化钼的区域则形成了插层相。在 ReS2-WS2 系统中,有一个固溶体区域,包括 30、50 和 70 摩尔%的二硫化铼。它们的结构是对原始成分结构的多晶型修正。在氧化态(+IV)的这些相中,铼、钼和钨的存在得到了证实。所获得的有关二钴化物体系中相形成的数据可实际用于制造具有独特电子、磁性和光学特性的材料,其应用范围十分广泛。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信