STUDY OF ELECTRONIC STRUCTURE OF Ag2Se, Sb2Se3, AgSbP2Se6

V.I. Sabov, A. Pogodin, M. Sabov, I. Barchii, Y. Studenyak, G.Yu. Havryltso, A.A. Stercho
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Abstract

The crystal structure of the AgSbP2Se6 compound was studied by X-ray powder method. Crystal chemical structural calculations using the EXPO–CCP14 software complex showed that the AgSbP2Se6 compound crystallizes in trigonal syngoni, SG R-3, unit cell parameters a = 6.61573 Å, c = 39.86223 Å, V=1510.94 Å3, Z=6. A crystal-chemical analysis of the structures of complex selenides Ag2Se, Sb2Se3, AgSbP2Se6 was carried out. Ag2Se compound (low-temperature modification) crystallizes in orthorhombic syngonia (P212121). Ag+ cations are bound in a 3-coordinate geometry with three equivalent Se2– atoms. Se2– anions coordinate six Ag+ around themselves. Sb2Se3 crystallizes in orthorhombic syngonia (Pnma) with a weakly expressed layered 2D-structure. Sb3+ cations are in two non-equivalent positions: in the first they form deformed [SbSe6] octahedra, in the second [SbSe5] square pyramids. The crystal structure of the compound AgSbP2Se6 (R-3) is characterized by the formation of layers from the anionic group of atoms [P2Se6]4–. In the space between the anionic groups, cations Ag+, Sb3+, which are in octahedral coordination with Se2–, are placed alternately. Sb3+ cations are located on the same plane as the P–P bond centers of [P2Se6]4– anionic groups, Ag+ cations are slightly displaced relative to this plane. The study of the optical absorption spectra of AgSbP2Se6 single crystal showed that it is characterized by a direct-band allowed type of conductivity, the band gap is Eg=1.49 eV (Tautz method based on (αhν)2=f(hν) Eg=1.48 eV). Ab initio quantum-chemical calculations of the electronic structure using the Quantum Espresso (QE) software package based on density functional theory (DFT) showed that the complex selenides Ag2Se, Sb2Se3, AgSbP2Se6 are characterized by a direct band type of conductivity, the width of the optical band gap Eg = 0.05 eV (Ag2Se ), Eg = 0.87 eV (Sb2Se3), Eg = 1.42 eV (AgSbP2Se6), Fermi energy EFermi=9.75 eV (Ag2Se), EFermi=6.12 eV (Sb2Se3), EFermi=5.34 eV (AgSbP2Se6). The optical band gap (Eg) of Sb2Se3, AgSbP2Se6 compounds are formed by electron transitions Se 4p → Sb 5p, for the Ag2Se compound Se 4p → Ag 5s.
Ag2Se、Sb2Se3 和 AgSbP2Se6 的电子结构研究
利用 X 射线粉末法研究了 AgSbP2Se6 化合物的晶体结构。利用 EXPO-CCP14 软件复合物进行的晶体化学结构计算表明,AgSbP2Se6 化合物以 SG R-3 三方共格结晶,单胞参数 a = 6.61573 Å,c = 39.86223 Å,V=1510.94 Å3,Z=6。Ag2Se化合物(低温改性)以正交合晶(P212121)形式结晶。Ag+ 阳离子与三个等价的 Se2- 原子以 3 配位几何形式结合。Se2- 阴离子在自身周围配位 6 个 Ag+。Sb2Se3 晶体为正方晶系(Pnma),具有微弱的层状二维结构。Sb3+ 阳离子处于两个非等价位置:在第一个位置形成变形的 [SbSe6] 八面体,在第二个位置形成 [SbSe5] 方形金字塔。化合物 AgSbP2Se6 (R-3) 晶体结构的特点是由阴离子原子团 [P2Se6]4- 形成层。在阴离子基团之间的空间中,与 Se2- 形成八面体配位的阳离子 Ag+、Sb3+ 交替排列。Sb3+阳离子与[P2Se6]4-阴离子基团的P-P键中心位于同一平面上,Ag+阳离子相对于该平面略有位移。对AgSbP2Se6单晶的光吸收光谱的研究表明,它具有直接带允许型导电的特点,带隙为Eg=1.49 eV(基于(αhν)2=f(hν) Eg=1.48eV的陶兹方法)。使用基于密度泛函理论(DFT)的 Quantum Espresso (QE) 软件包对电子结构进行的 Ab initio 量子化学计算表明,复合硒化物 Ag2Se、Sb2Se3、AgSbP2Se6 具有直接带型导电的特点,光带隙宽度 Eg = 0.05 eV(Ag2Se ),Eg = 0.87 eV(Sb2Se3),Eg = 1.42 eV(AgSbP2Se6),费米能 EFermi=9.75 eV(Ag2Se),EFermi=6.12 eV(Sb2Se3),EFermi=5.34 eV(AgSbP2Se6)。Sb2Se3和AgSbP2Se6化合物的光带隙(Eg)是由电子跃迁Se 4p → Sb 5p形成的,而Ag2Se化合物则是由电子跃迁Se 4p → Ag 5s形成的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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