How to enable highly efficient and large‐area fabrication on specific textures for monolithic perovskite/silicon tandem solar cells?

Xin Li, Zhiqin Ying, Xuezhen Wang, Yuheng Zeng, Xi Yang, Jichun Ye
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Abstract

Perovskite/silicon tandem solar cells (PVSK/Si TSCs) have emerged as a promising photovoltaic technology toward achieving a high power conversion efficiency (PCE) along with cost‐effective manufacturing. The PCE of PVSK/Si TSCs has skyrocketed to a certified 33.9%, surpassing the theoretical limit of any single‐junction solar cell. This achievement is partially attributed to advancements in surface textures for Si bottom cells. In this regard, we present an overview of the recent developments concerning surface textures of Si in monolithic PVSK/Si TSCs, including planar, pyramid texture, and nanotexture. Following, the prevailing perovskite deposition methods on these textures are thoroughly discussed, and the corresponding challenges are evaluated. Additionally, we provide a summary of the advanced morphological, structural, optical, and electrical characterization techniques being utilized for theses textures. Finally, the prospects for further development of PVSK/Si TSCs are outlined, including designing novel textures with industrial compatibility, developing perovskite deposition methods with scalability, and exploring more pertinent characterization techniques for textured PVSK/Si TSCs.
如何在特定纹理上高效、大面积地制造整体式过氧化物硅/硅串联太阳能电池?
过氧化物硅酸盐/硅串联太阳能电池(PVSK/Si TSCs)已成为一种前景广阔的光伏技术,可实现较高的功率转换效率(PCE)和成本效益。PVSK/Si TSC 的 PCE 已飙升至 33.9%,超过了任何单结太阳能电池的理论极限。这一成就部分归功于硅底电池表面纹理的进步。为此,我们概述了单片 PVSK/Si TSC 中硅表面纹理的最新发展,包括平面纹理、金字塔纹理和纳米纹理。随后,我们深入讨论了这些纹理的常用包晶沉积方法,并评估了相应的挑战。此外,我们还总结了针对这些纹理所采用的先进形态、结构、光学和电学表征技术。最后,我们概述了 PVSK/Si TSCs 的进一步发展前景,包括设计具有工业兼容性的新型纹理、开发具有可扩展性的过氧化物沉积方法,以及为纹理 PVSK/Si TSCs 探索更多相关的表征技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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