Graphene and Vanadium Dioxide-Based Terahertz Absorber with Switchable Multifunctionality for Band Selection Applications

Nanomaterials Pub Date : 2024-07-15 DOI:10.3390/nano14141200
Yan Liu, Lingxi Hu, Ming Liu
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Abstract

This study proposes a multifunctional absorber in the terahertz (THz) regime based on vanadium dioxide (VO2) and graphene with either–or band selector applications, which can be realized by electrically and thermally controlling the Fermi energy level of graphene and vanadium dioxide, respectively. The broadband absorption can be achieved with absorptance exceeding 90%, when the VO2 film is in the metallic phase and the Fermi energy levels of the upper and lower graphene layers are simultaneously set to 0.6 and 0 eV, respectively. The double narrowband can be realized when the VO2 film is in the insulating phase and the Fermi energy levels in upper and lower graphene layers are set as 0 and 0.8 eV, respectively. By flexibly shifting between the broadband and the double narrowband, the proposed absorber can be used as an either–or band selector, corresponding optional bandwidth from 2.05 to 2.35 THz, and 3.25 to 3.6 THz. Furthermore, single narrowband absorption can be achieved by setting the conductivity of the VO2 film to appropriate values. The proposed absorber can be used in the THz regime in applications such as multifunctional devices, switches, cloaking objects, and band selectors.
基于石墨烯和二氧化钒的太赫兹吸收器,具有可切换的多功能性,适用于频带选择应用
本研究提出了一种基于二氧化钒(VO2)和石墨烯的太赫兹(THz)波段多功能吸收器,可通过电学和热学方法分别控制石墨烯和二氧化钒的费米能级,实现带选择器的应用。当二氧化钒薄膜处于金属相,上下石墨烯层的费米能级同时分别设置为 0.6 和 0 eV 时,可实现宽带吸收,吸收率超过 90%。当 VO2 薄膜处于绝缘相,且上下石墨烯层的费米能级分别设定为 0 和 0.8 eV 时,可实现双窄带。通过在宽带和双窄带之间灵活转换,所提出的吸收器可用作非此即彼的频带选择器,相应的可选带宽为 2.05 至 2.35 太赫兹和 3.25 至 3.6 太赫兹。此外,通过将 VO2 薄膜的电导率设置为适当的值,还可以实现单窄带吸收。所提出的吸收器可用于太赫兹波段,如多功能器件、开关、隐形物体和波段选择器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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