Investigation of structural, dielectric and electrical properties of lead-free bismuth-based layered multifunctional material: CaBiGdNbVO9 for device fabrication

Abstract

The current study endeavors to fabricate a lead-free bismuth-based layered multifunctional material denoted as CaBiGdNbVO₉ (CBGNVO), achieved through synthesis and characterization. X-ray diffraction analysis indicates a polycrystalline nature for the developed system, exhibiting orthorhombic crystal symmetry. Structural parameters obtained are a = 14.5781 Å, b = 27.3108 Å, c = 3.7148 Å, and V = 1479.01 Å³. Electron microscopic examination reveals compactness and uniform distribution of grains of similar sizes across the pellet sample surface. Electrical data analysis, encompassing relative permittivity, loss tangent, and impedance as functions of temperature and frequency, elucidates dielectric relaxation and conduction mechanisms within the material. These findings suggest the potential suitability for various applications, such as temperature sensors and bandwidth regulation. Examination of electronic charge carriers reveals a short-range order, validated through complex modulus and impedance spectrum analysis. A comprehensive investigation into resistive, capacitive, and microstructural characteristics provides valuable insights, positioning the material as a viable electronic component for device fabrication.