Change in Transmittance of Indium-Tin-Oxide-Coated Silicon Waveguides Exposed to Intense Light Pulses

Abstract

A simple scheme is proposed that allows one to verify the effect of nonlinear properties of an indium-tin oxide film on the transmittance of integrated silicon waveguides. In the proposed implementation, the transmittance of the waveguide depends on the transmitted light intensity. The scheme is adapted for direct experimental verification. To calculate characteristics and optimize geometry, nonlinear Maxwell equations are solved numerically in frequency space. Nonlinearity is introduced into the equations as a general function, without the usual expansion in a series in powers of the field, and is parameterized on the basis of experimental data. Simulation is performed in three-dimensional space.