Investigation on crack propagation of SiCf/SiC composite via PF-CZM method

Bowen Qiu , Zhuang Li , Shuang Liang , Cheng Zhang , Chong Wei , Zhong Xiao
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Abstract

SiCf/SiC composite materials had become a research hotspot in the fields of aerospace materials and nuclear materials in recent years. This materials have high strength, radiation resistance, high temperature resistance and oxidation resistance. However, SiC is a typical brittle material prone to being damaged due to stress concentration in some cases, leading to cracks and even component failure. Therefore, this study employed an accurate and efficient numerical simulation method, phase field cohesive zone method (PFCZM), to investigate the microscopic damage behavior of SiCf/SiC composite materials. This study aimed to illustrate the influence of the thickness of pyrolytic carbon (PyC) interface layer on the failure behavior of SiCf/SiC composite materials. Firstly, this study conducted relevant verification of PFCZM. Secondly, numerical simulations of crack initiation, crack propagation, and final damage were performed by establishing a representative volume element (RVE). Observing the simulation results, it was noted that at low strain, when PyC was thicker, the SiCf/SiC composite materials exhibited slight damage to both the SiC matrix and PyC interface. Conversely, when PyC was thinner, the SiCf/SiC composite materials displayed only slight damage to PyC interface. As the PyC thickness increases, the damage to PyC interface decreases, while the damage to SiC becomes more prominent. Simultaneously, a competitive relationship in the damage behavior of SiCf/SiC composite materials can be found after the SiC matrix has cracked: When PyC is thinner, the damage primarily manifests as interlayer delamination between the SiC matrix and the SiC fiber. Conversely, when PyC is thicker, it manifests in PyC failure. Finally, this study concluded that, in this investigation, a PyC interface layer with a thickness of 0.1 μm exhibited the most effective protective effect on SiCf/SiC composite material.

利用 PF-CZM 方法研究碳化硅/碳化硅复合材料的裂纹扩展情况
SiCf/SiC 复合材料近年来已成为航空航天材料和核材料领域的研究热点。这种材料具有高强度、抗辐射、耐高温、抗氧化等特点。然而,SiC 是一种典型的脆性材料,在某些情况下容易因应力集中而损坏,导致裂纹甚至组件失效。因此,本研究采用了一种精确高效的数值模拟方法--相场内聚区法(PFCZM)来研究 SiCf/SiC 复合材料的微观损伤行为。本研究旨在说明热解碳(PyC)界面层厚度对 SiCf/SiC 复合材料失效行为的影响。首先,本研究对 PFCZM 进行了相关验证。其次,通过建立代表性体积元素(RVE),对裂纹萌发、裂纹扩展和最终破坏进行了数值模拟。通过观察模拟结果发现,在低应变时,当 PyC 较厚时,SiCf/SiC 复合材料的 SiC 基体和 PyC 界面均出现轻微损伤。相反,当 PyC 较薄时,SiCf/SiC 复合材料仅对 PyC 界面造成轻微损坏。随着 PyC 厚度的增加,PyC 界面的损伤会减小,而 SiC 的损伤会变得更加突出。同时,SiC基体开裂后,SiCf/SiC复合材料的损伤行为也存在竞争关系:当 PyC 较薄时,损坏主要表现为 SiC 基体和 SiC 纤维之间的层间分层。相反,当 PyC 较厚时,则表现为 PyC 失效。最后,本研究得出结论:在本研究中,厚度为 0.1 μm 的 PyC 界面层对 SiCf/SiC 复合材料的保护作用最为有效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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