Dielectric energy storage materials for space sensors: effect of processing on the performance

Narasimha S. Prasad, Gabrielle Amalthea Trobare, Aria Tauraso, C. Su, Bradley Arnold, Fow-Sen Choa, Brian Cullum, Kamdeo D. Mandal, N. Singh
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Abstract

This paper explores the development of innovative materials for the dielectric energy storage for space components. The CaCu3Ti4O12 or CCTO belonging to perovskite family is of interest due to its colossal dielectric constant. It was demonstrated that materials synthesized at low temperature show nonequilibrium state and exhibit differences in the dielectric and resistivity values. The goal is to obtain high dielectric constant along with high resistivity values for achieving enhanced breakdown voltage. By using other members of the perovskite structures, it was demonstrated that similar colossal dielectric constant is observed and is dependent on processing methods. We have used heterovalent and dissimilar sized atom to replace Ca+2 ion. Accordingly, we replaced Ca+2 ion with heavy Ga+3 ion and developed gallium-based material system, Ga2/3 Cu3Ti4O12. Following successful synthesis, we measured its dielectric constant and resistivity and compared with CCTO material system. Results of five sets of samples showed that lower temperature processing demonstrated mechanism of grain growth, but due to copper flow in high temperature processed samples dielectric constant and resistivity values were different.
用于空间传感器的介质储能材料:加工对性能的影响
本文探讨了用于空间元件介电储能的创新材料的开发。属于包晶石家族的 CaCu3Ti4O12 或 CCTO 因其巨大的介电常数而备受关注。研究表明,在低温下合成的材料会呈现非平衡态,并在介电值和电阻率方面表现出差异。我们的目标是获得高介电常数和高电阻率值,从而提高击穿电压。通过使用包晶石结构的其他成员,我们观察到了类似的巨大介电常数,并且取决于加工方法。我们使用了异价和尺寸不同的原子来取代 Ca+2 离子。因此,我们用重的 Ga+3 离子取代了 Ca+2 离子,并开发出镓基材料系统 Ga2/3 Cu3Ti4O12。合成成功后,我们测量了其介电常数和电阻率,并与 CCTO 材料体系进行了比较。五组样品的结果表明,低温加工显示了晶粒生长的机制,但由于铜在高温加工样品中的流动,介电常数和电阻率值有所不同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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