Micro‐scale, In‐plane Thermal Conductivity of PEDOT:PSS Thin Films Measured by a Suspended Membrane Device

Felix Jiang, Mengzhe Ning, Sven Ingebrandt, X. Vu
{"title":"Micro‐scale, In‐plane Thermal Conductivity of PEDOT:PSS Thin Films Measured by a Suspended Membrane Device","authors":"Felix Jiang, Mengzhe Ning, Sven Ingebrandt, X. Vu","doi":"10.1002/pssa.202400256","DOIUrl":null,"url":null,"abstract":"The in‐plane thermal conductivity of ultra‐thin films is of high interest due to its role in many technological applications, while being very challenging to measure. The challenge lies in creating a heat flow laterally through the thin sample film while eliminating all heat losses to the substrate and the surrounding air. A technique involving two parallel, line‐shaped resistance temperature detectors (RTDs) as a pair of heater and sensor on a nanometer‐thin suspended membrane, which minimizes heat losses to the substrate, has been recently introduced and numerically modeled. Herein, measurements employing two parallel line RTDs on a (164 ± 3) nm thin silicon nitride (SiNx) membrane for characterization of heat flux in electrically conductive polymer films are presented. On top of heater and RTD, silicon dioxide (SiO2) is used as a electrical passivation layer. (118 ± 35) nm poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) thin films are characterized. The methodology to enable these measurements starting from the fabrication of the devices using photolithography and chemical wet etching and the assembly of the high vacuum setup for precise measurements are discussed. Thermal conductivities of 2.9 ± 0.2 W m−1 K−1, 0.6 ± 0.2 W m−1 K−1, and 0.4 ± 0.8 W m−1 K−1 are measured for the SiNx, SiO2 and PEDOT:PSS thin films, respectively. Our findings can facilitate this flexible measurement method to other material systems.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"physica status solidi (a)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssa.202400256","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The in‐plane thermal conductivity of ultra‐thin films is of high interest due to its role in many technological applications, while being very challenging to measure. The challenge lies in creating a heat flow laterally through the thin sample film while eliminating all heat losses to the substrate and the surrounding air. A technique involving two parallel, line‐shaped resistance temperature detectors (RTDs) as a pair of heater and sensor on a nanometer‐thin suspended membrane, which minimizes heat losses to the substrate, has been recently introduced and numerically modeled. Herein, measurements employing two parallel line RTDs on a (164 ± 3) nm thin silicon nitride (SiNx) membrane for characterization of heat flux in electrically conductive polymer films are presented. On top of heater and RTD, silicon dioxide (SiO2) is used as a electrical passivation layer. (118 ± 35) nm poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) thin films are characterized. The methodology to enable these measurements starting from the fabrication of the devices using photolithography and chemical wet etching and the assembly of the high vacuum setup for precise measurements are discussed. Thermal conductivities of 2.9 ± 0.2 W m−1 K−1, 0.6 ± 0.2 W m−1 K−1, and 0.4 ± 0.8 W m−1 K−1 are measured for the SiNx, SiO2 and PEDOT:PSS thin films, respectively. Our findings can facilitate this flexible measurement method to other material systems.
通过悬浮膜装置测量 PEDOT:PSS 薄膜的微尺度面内导热率
超薄薄膜的面内热导率在许多技术应用中都发挥着重要作用,因此备受关注,但测量难度很大。难点在于如何在消除基底和周围空气的所有热量损失的同时,在样品薄膜上形成横向热流。最近推出了一种技术,即在纳米级薄悬浮膜上使用两个平行的线型电阻温度探测器(RTD)作为一对加热器和传感器,从而最大限度地减少基底的热损失,并对其进行了数值建模。本文介绍了在氮化硅(SiNx)薄膜(164 ± 3)纳米上使用两个平行线热电阻进行测量,以确定导电聚合物薄膜中热流量的特性。在加热器和热电阻的顶部,使用二氧化硅(SiO2)作为电钝化层。(118 ± 35) nm 的聚(3,4-亚乙二氧基噻吩)聚苯乙烯磺酸盐 (PEDOT:PSS) 薄膜进行了表征。本文讨论了从使用光刻技术和化学湿法蚀刻技术制造器件到组装用于精确测量的高真空装置的方法。测得 SiNx、SiO2 和 PEDOT:PSS 薄膜的热导率分别为 2.9 ± 0.2 W m-1 K-1、0.6 ± 0.2 W m-1 K-1 和 0.4 ± 0.8 W m-1 K-1。我们的研究结果有助于将这种灵活的测量方法应用到其他材料系统中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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