GaSb/Si Heterojunction Based Pocket Engineered Vertical Non-Uniform Channel Double Gate TFETs for Low Power Applications

Swaroop Kumar Macherla, Ekta Goel
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Abstract

This article compares the performance of two Vertical Non-Uniform Channel Double Gate Tunnel Field Effect Transistors (VNUCDGTFETs), a normal all-Silicon Tunnel Field-Effect Transistor (TFET) having a pocket and another one a Gallium Antimonide/Silicon heterojunction TFET with pocket. GaSb is a III-V narrow energy band gap material, employed in the source area of the TFET structure to decrease the tunneling width and thus to make more number of carriers capable enough to tunnel through the heterojunction. The proposed source pocket heterojunction non uniform channel TFET presents superior performance as compared to the conventional non uniform channel vertical TFET with a pocket, regarding a larger ION/IOFF ratio, a reduced sub-threshold swing, and a smaller threshold voltage at VDS=0.5V. Furthermore, the proposed TFET device undergoes a comprehensive analysis of both DC parameters and various analog/RF parameters.
用于低功耗应用的基于 GaSb/Si 异质结的袖珍工程垂直非均匀沟道双栅 TFET
本文比较了两种垂直非均匀沟道双栅极隧道场效应晶体管(VNUCDGTFET)的性能,一种是带沟道的普通全硅隧道场效应晶体管(TFET),另一种是带沟道的锑化镓/硅异质结 TFET。GaSb 是一种 III-V 族窄能带隙材料,用于 TFET 结构的源区,以减小隧穿宽度,从而使更多的载流子能够隧穿异质结。与传统的带口袋的非均匀沟道垂直 TFET 相比,所提出的源口袋异质结非均匀沟道 TFET 具有更高的 ION/IOFF 比、更小的阈下摆动和 VDS=0.5V 时更小的阈值电压,性能更优越。此外,还对拟议的 TFET 器件的直流参数和各种模拟/射频参数进行了全面分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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