Two-dimensional Mo decorated borophenes: high critical temperature, large magnetic anisotropy, and stacking-dependent magnetism

Zhen Gao, Fengxian Ma, Hongbo Wu, Weizhen Meng, Yalong Jiao
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Abstract

Two-dimensional (2D) magnetic materials with high critical temperature, large magnetic anisotropy energy and intrinsic magnetism hold great promise for advancements in spintronics. However, synergizing these attributes within a single material remains challenging. Through the application of swarm-intelligence-based structure searching along with first-principles calculations, we identify two Mo decorated borophene variants, denoted as MoB4 and MoB6, are such candidates with high thermal and dynamical stabilities. MoB4 and MoB6 are characterized as either ferromagnetic or antiferromagnetic metals. Notably, both MoB4 and MoB6 display sizable magnetic anisotropy energy—924 and 932 μeV per Mo atom, respectively—surpassing that of the widely studied CrI3 monolayer, which measures 685 μeV per Cr atom. Monte Carlo simulation suggests the Curie temperature of MoB4 sheet is 390K, which is above room temperature. Our examination uncovers that bilayer MoxBy formations exhibit layer-specific van der Waals interactions, contrasting with bilayer borophenes produced experimentally, which display robust interlayer chemical bonding. We determine that the stacking order profoundly influence both the magnetic anisotropy energy and critical temperatures of the material. Specifically, the magnetic anisotropy energy for both structures doubles in their bilayer configurations, with AB-stacked MoB4 and AC-stacked MoB6 demonstrating critical temperatures of 550K and 320K, respectively. The exceptional electronic and magnetic characteristics of the MoxBy monolayers position them as favorable candidates for future spintronic devices.
二维钼装饰硼苯:高临界温度、大磁各向异性和堆叠相关磁性
具有高临界温度、大磁各向异性能和本征磁性的二维(2D)磁性材料为自旋电子学的发展带来了巨大希望。然而,在单一材料中实现这些属性的协同增效仍具有挑战性。通过应用基于蜂群智能的结构搜索和第一原理计算,我们确定了两种钼装饰硼吩变体,分别称为 MoB4 和 MoB6,它们是具有高热稳定性和高动态稳定性的候选材料。MoB4 和 MoB6 被表征为铁磁性或反铁磁性金属。值得注意的是,MoB4 和 MoB6 都显示出相当大的磁各向异性能,每个 Mo 原子的磁各向异性能分别为 924 和 932 μeV,超过了被广泛研究的 CrI3 单层的磁各向异性能,后者每个 Cr 原子的磁各向异性能为 685 μeV。蒙特卡罗模拟表明,MoB4 片的居里温度为 390K,高于室温。我们的研究发现,双层 MoxBy 的形成表现出特定层的范德华相互作用,这与实验中产生的双层硼苯形成鲜明对比,后者表现出强大的层间化学键。我们发现,堆积顺序对材料的磁各向异性能和临界温度都有深刻影响。具体来说,这两种结构的磁各向异性能在其双层构型中都增加了一倍,AB 层 MoB4 和 AC 层 MoB6 的临界温度分别为 550K 和 320K。MoxBy 单层优异的电子和磁特性使它们成为未来自旋电子器件的有利候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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