Dual-bootstrapping gate driver circuit design using IGZO TFTs

Abstract

To promote the integration of thin-film transistor (TFT) gate driver circuit technology into high-resolution large-size display application with narrow bezel, achieving high speed is a critical challenge. This paper proposed a dual-bootstrapping TFT integrated gate driver circuit for large-size display. The over-drive voltage of the driving TFT was increased both at the rising and falling edges of the output waveforms. To validate the circuit feasibility, the proposed circuit was fabricated using amorphous indium-gallium-zinc-oxide (a-IGZO) TFT technology and measured in terms of transient response with cascaded stages and reliability tests over long operating time. Compared to conventional approaches, the proposed gate driver demonstrates a 39 % reduction in the falling time as well as compact layout. Therefore, the proposed gate driver schematic is well-suited for large-size display applications that involves heavy resistance–capacitance (RC) loadings and require high resolution above 8 K.