Numerical Study of Graded CZT (S, Se) Solar Cell with 2D Transition Metal Dichalcogenide Tungsten Disulfide (WS2) as a Buffer Layer

Mohamed Lahoual, Mohammed Bourennane, L. Aidaoui
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Abstract

Recently, there has been a surge of research interest in exploring solar cells based on Cu2ZnSn(S, Se)4 (CZTSSe) for enhanced efficiencies. Traditionally, CdS has served as the buffer layer in these solar cells. However, there is growing scientific exploration aimed at replacing CdS with alternative materials. This work focuses on leveraging a graded CZTSSe absorber layer alongside tungsten disulfide (WS2) 2D transition metal dichalcogenides. WS2 semiconductor as buffer layer is less price, low toxicity with high‐stability, and its performance is compared to that of CdS/CZTSSe solar cells. This comparative study aims to assess the efficacy of the WS2/CZTSSe structure as a potential alternative to the conventional CdS/CZTSSe configuration, with the overarching objective of enhancing overall solar cell efficiency. Initially, to demonstrate the accuracy of our simulated results, a comparison is made between the reported experimental data of CdS/CZTSSe and the simulated data. This numerical investigation utilizes solar cell capacitance simulator ‐1D software. The primary focus of this research is to evaluate the effects of varying thicknesses and doping densities of the absorber and buffer layers, as well as WS2, CdS, and CZTSSe defect densities, on Voc, Jsc, fill factor (FF), and power conversion efficiency. The aim is to achieve optimal device performance through systematic optimization of these parameters. The findings reveal that the WS2/CZTSSe solar cell achieves the highest conversion efficiency of 14.38%, accompanied by a Voc of 0.6920 V, Jsc of 24.96 mA cm−2, and FF of 83.28%. This performance surpasses that of the CdS/CZTSSe configuration, which demonstrates an efficiency of 12.74%, Voc of 0.518 V, Jsc of 37.77 mA cm−2, and FF of 65.10%. These results hold significant promise for the practical implementation of WS2/CZTSSe solar cell structures, offering a pathway toward generating clean, pollution‐free, and cost‐effective energy solutions.
以二维过渡金属二卤化二硫化钨 (WS2) 为缓冲层的分级 CZT(S,Se)太阳能电池的数值研究
最近,人们对探索基于 Cu2ZnSn(S,Se)4 (CZTSSe) 的太阳能电池以提高效率产生了浓厚的研究兴趣。传统上,CdS 是这些太阳能电池的缓冲层。然而,人们越来越多地进行科学探索,旨在用替代材料取代 CdS。这项工作的重点是利用分级 CZTSSe 吸收层和二硫化钨(WS2)二维过渡金属二钴化物。作为缓冲层的 WS2 半导体价格低廉、毒性低且稳定性高,其性能与 CdS/CZTSSe 太阳能电池的性能进行了比较。这项比较研究旨在评估 WS2/CZTSSe 结构作为传统 CdS/CZTSSe 配置的潜在替代品的功效,其首要目标是提高太阳能电池的整体效率。首先,为了证明我们模拟结果的准确性,我们对 CdS/CZTSSe 的实验数据和模拟数据进行了比较。这项数值研究使用了太阳能电池电容模拟器-1D 软件。这项研究的主要重点是评估吸收层和缓冲层的不同厚度和掺杂密度以及 WS2、CdS 和 CZTSSe 缺陷密度对 Voc、Jsc、填充因子 (FF) 和功率转换效率的影响。其目的是通过系统优化这些参数来实现最佳器件性能。研究结果表明,WS2/CZTSSe 太阳能电池的转换效率最高,达到 14.38%,Voc 为 0.6920 V,Jsc 为 24.96 mA cm-2,FF 为 83.28%。这一性能超过了 CdS/CZTSSe 配置,后者的转换效率为 12.74%,Voc 为 0.518 V,Jsc 为 37.77 mA cm-2,FF 为 65.10%。这些结果为 WS2/CZTSSe 太阳能电池结构的实际应用带来了重大希望,为产生清洁、无污染和经济高效的能源解决方案提供了途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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