U. I. Erkaboev, G. Gulyamov, M. Dadamirzaev, R. G. Rakhimov, J. I. Mirzaev, N. A. Sayidov, U. M. Negmatov
{"title":"The influence of light on transverse magnetoresistance oscillations in low-dimensional semiconductor structures","authors":"U. I. Erkaboev, G. Gulyamov, M. Dadamirzaev, R. G. Rakhimov, J. I. Mirzaev, N. A. Sayidov, U. M. Negmatov","doi":"10.1007/s12648-024-03253-w","DOIUrl":null,"url":null,"abstract":"<p>In this work, the influence of light on the temperature dependence of transverse magnetoresistance oscillations is studied. A generalized mathematical expression that calculates the temperature and light dependence of the quasi-Fermi levels of small-scale p-type semiconductor structures in a quantizing magnetic field is derived. New analytical expressions have been found to represent the temperature dependence of transverse differential magnetoresistance ossillations in dark and light situations, taking into account the effect of light on the ossillations of the Fermi energy of small-scale semiconductor structures. A mathematical model determining the light dependence of the second-order derivative of oscillations of transverse magnetoresistance of p-type semiconductors with quantum wells on magnetic field induction is developed. A new theory explaining the reasons for the significant shift of oscillations of differential magnetoresistance along the vertical axis measured in the experiment for dark and light conditions is proposed.</p>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Indian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1007/s12648-024-03253-w","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the influence of light on the temperature dependence of transverse magnetoresistance oscillations is studied. A generalized mathematical expression that calculates the temperature and light dependence of the quasi-Fermi levels of small-scale p-type semiconductor structures in a quantizing magnetic field is derived. New analytical expressions have been found to represent the temperature dependence of transverse differential magnetoresistance ossillations in dark and light situations, taking into account the effect of light on the ossillations of the Fermi energy of small-scale semiconductor structures. A mathematical model determining the light dependence of the second-order derivative of oscillations of transverse magnetoresistance of p-type semiconductors with quantum wells on magnetic field induction is developed. A new theory explaining the reasons for the significant shift of oscillations of differential magnetoresistance along the vertical axis measured in the experiment for dark and light conditions is proposed.
这项工作研究了光对横向磁阻振荡的温度依赖性的影响。推导出了一种计算量化磁场中小规模 p 型半导体结构准费米级的温度和光依赖性的通用数学表达式。考虑到光对小尺度半导体结构费米能的折射的影响,找到了新的分析表达式来表示横向微分磁阻折射在黑暗和光明情况下的温度依赖性。建立了一个数学模型,以确定具有量子阱的 p 型半导体横向磁阻振荡的二阶导数对磁场感应的光依赖性。提出了一种新理论,解释了在黑暗和光明条件下,实验中测得的差分磁阻振荡沿垂直轴显著偏移的原因。
期刊介绍:
Indian Journal of Physics is a monthly research journal in English published by the Indian Association for the Cultivation of Sciences in collaboration with the Indian Physical Society. The journal publishes refereed papers covering current research in Physics in the following category: Astrophysics, Atmospheric and Space physics; Atomic & Molecular Physics; Biophysics; Condensed Matter & Materials Physics; General & Interdisciplinary Physics; Nonlinear dynamics & Complex Systems; Nuclear Physics; Optics and Spectroscopy; Particle Physics; Plasma Physics; Relativity & Cosmology; Statistical Physics.