Low static power consumption GaN-based CMOS-like inverter design

IF 1.3 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zilong Wang, Jiawei Chen, Yue Su, Xu Zhang, Lixia Zhao
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Abstract

It is necessary to achieve current matching for GaN-based CMOS-like inverters. However, due to the low hole mobility of GaN p-FET devices, the weak output capacity of GaN p-FET devices makes it difficult to obtain current matching with n-FET devices in the off-state, which hinders the development of GaN-based CMOS-like inverters. In this study, a GaN-based CMOS-like device with an AlGaN back barrier layer is designed and its off-state leakage current is compared with that without an AlGaN back-barrier layer. The results show that the 2DEG confinement in the GaN-based n-FET device with an AlGaN back barrier layer can be enhanced and the leakage current is reduced from 10–3 A to 10–6 A in the off-state. This is accomplished without influencing the current of the GaN-based p-FET device in the off-state, resulting in a good current consistency between the n-FET device and the p-FET device in the off-state. The static power consumption is 4.5 µW for GaN-based CMOS-like inverters with an AlGaN back barrier structure when it is operated at Vdd = 5 V. The rise time (tr) and fall time (tf) of the GaN-based CMOS-like inverters are 4 μs and 0.12 μs, respectively. The low noise margin (NML) is 1.90 V and the high noise margin (NMH) is 2.55 V. This work lays a foundation for the development of the future of GaN-based integrated ICs.

Abstract Image

低静态功耗、基于氮化镓的类 CMOS 逆变器设计
对于基于氮化镓的类 CMOS 逆变器来说,实现电流匹配是非常必要的。然而,由于氮化镓 p-FET 器件的低空穴迁移率,氮化镓 p-FET 器件的输出能力较弱,因此在关态时很难获得与 n-FET 器件的电流匹配,这阻碍了基于氮化镓的类 CMOS 逆变器的发展。本研究设计了一种带有氮化镓背阻层的氮化镓基类 CMOS 器件,并将其关态漏电流与不带氮化镓背阻层的器件进行了比较。结果表明,带有氮化镓背阻挡层的氮化镓基 n-FET 器件中的 2DEG 限制得到了增强,关态漏电流从 10-3 A 减小到 10-6A。这不会影响氮化镓基 p-FET 器件在关断状态下的电流,从而使 n-FET 器件和 p-FET 器件在关断状态下的电流保持良好的一致性。基于氮化镓的类 CMOS 逆变器的上升时间(tr)和下降时间(tf)分别为 4 μs 和 0.12 μs。低噪声裕量(NML)为 1.90 V,高噪声裕量(NMH)为 2.55 V。这项工作为未来基于氮化镓的集成电路的发展奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Power Electronics
Journal of Power Electronics 工程技术-工程:电子与电气
CiteScore
2.30
自引率
21.40%
发文量
195
审稿时长
3.6 months
期刊介绍: The scope of Journal of Power Electronics includes all issues in the field of Power Electronics. Included are techniques for power converters, adjustable speed drives, renewable energy, power quality and utility applications, analysis, modeling and control, power devices and components, power electronics education, and other application.
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