Polarization‐Graded High‐Electron‐Mobility Transistors for Improved Johnson's Figure of Merit

physica status solidi (a) Pub Date : 2024-05-21 DOI:10.1002/pssa.202300923

N. Venkatesan, Gerardo Silva-Oelker, Wesley Turner, Jeong‐Sun Moon, Patrick Fay

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Abstract

Polarization grading in AlGaN/GaN‐based high‐electron‐mobility transistors (HEMTs) is a promising device design option that can improve linearity, speed, power, and noise performance for use in millimeter‐wave applications. This work investigates the potential of compositionally graded HEMT heterostructures to enhance device breakdown through lateral electric field engineering while maintaining a high device cutoff frequency (fT) due to reduced longitudinal optical (LO) phonon scattering. The impact of polarization grading on electric field profile is compared with conventional gate‐integrated mini‐field plates (mini‐FPs). It is also observed that polarization grading can augment the efficacy of gate‐connected FPs, further enhancing performance. Using physics‐based 2D device simulations, it is demonstrated that polarization engineering via polarization grading enhances breakdown (VBD) while preserving high fT, resulting in a Johnson's figure of merit (JFOM = fT × VBD), that is, ≈2.4× that of a conventional abrupt‐junction HEMT. This improvement represents a significant advancement over the ≈1.25× to ≈2× increase achieved with the use of mini‐FPs alone in HEMTs.

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偏振分级高电子迁移率晶体管，改善约翰逊功勋值

基于氮化铝/氮化镓的高电子迁移率晶体管（HEMT）中的极化分级是一种很有前途的器件设计方案，可以提高毫米波应用中的线性度、速度、功率和噪声性能。这项研究探讨了成分分级 HEMT 异质结构通过横向电场工程增强器件击穿的潜力，同时由于减少了纵向光学 (LO) 声子散射而保持了较高的器件截止频率 (fT)。极化分级对电场剖面的影响与传统的栅极集成微型场板（mini-FPS）进行了比较。此外，还观察到偏振分级可以增强栅极连接 FP 的功效，从而进一步提高性能。利用基于物理学的二维器件仿真，证明了通过极化分级进行极化工程可增强击穿（VBD），同时保持高 fT，从而实现约翰逊优越性（JFOM = fT × VBD），即≈传统突变结 HEMT 的 2.4 倍。与在 HEMT 中单独使用 mini-FP 所实现的≈1.25×到≈2×的增幅相比，这一改进是一项重大进步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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physica status solidi (a)

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