Physical and sensing characterization of nanostructured Ag doped TiO2 thin films

IF 0.9 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
M. S. Sada, R. I. Jasim, A. M. Saleh, K. N. Hussein, N. Habubi, S. Chiad
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引用次数: 0

Abstract

On glass substrates, silver (Ag) doped Titanium dioxide (TiO2) films at varied levels of concentrations (0, 2, and 4) % wt were synthesized by chemical spray pyrolysis (CSP). As per the X-ray diffraction pattern, the only phases present in the sample were anatase and rutile TiO2. Using AFM, it was discovered that the TiO2 thin films were smooth and compact; however, the surface roughness increases as the dopant amount decreases. SEM images display TiO2 films. Surface transformation is evident with uniform spherical nanograins after Ag doping. The optical characteristics of wavelength range (300-900) nm have been investigated using absorbance and transmittance spectra. The results revealed that the films have a 65-75 % transmittance in VIS-NIR spectra for all films. The allowable direct electronic transitions have (3.15-3.25) eV energy gaps. At 250 ppm, the NH3 gas sensor exhibited increased resistance, indicating heightened sensitivity. Sensitivity decreases with concentration increases to 0 %, 2 %, and 4 % of Ag for NH3 gas. Reduction observed: 18.4% to 4.6% (50 ppm), 20.7% to 6.8% (150 ppm), and 25.9% to 8.2% (250 ppm).
纳米结构掺银二氧化钛薄膜的物理和传感表征
通过化学喷雾热解(CSP)法,在玻璃基底上合成了掺银(Ag)的二氧化钛(TiO2)薄膜,其浓度水平(0、2 和 4)各不相同。根据 X 射线衍射图样,样品中只存在锐钛矿型和金红石型二氧化钛。使用原子力显微镜(AFM)观察发现,TiO2 薄膜光滑而紧密;然而,随着掺杂剂量的减少,表面粗糙度也在增加。扫描电镜图像显示了二氧化钛薄膜。掺杂 Ag 后,表面转变明显,出现了均匀的球形纳米颗粒。利用吸光度和透射光谱研究了波长(300-900)纳米范围内的光学特性。结果表明,所有薄膜在可见光-近红外光谱中的透射率为 65-75%。允许的直接电子跃迁能隙为 (3.15-3.25) eV。在浓度为 250 ppm 时,NH3 气体传感器的电阻增加,表明灵敏度提高。灵敏度随着 NH3 气体的银浓度增加到 0%、2% 和 4%而降低。观察到的降低幅度:18.4% 降至 4.6%(50 ppm),20.7% 降至 6.8%(150 ppm),25.9% 降至 8.2%(250 ppm)。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.90
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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