First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding

physica status solidi (a) Pub Date : 2024-05-15 DOI:10.1002/pssa.202300953

Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng

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Abstract

In0.17Al0.83N/GaN high‐electron‐mobility transistor (HEMT) using GaN‐on‐Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X‐Ray diffraction and micro‐Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate‐length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN‐based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm‐wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high‐power and RF applications, enabling more compact and efficient systems.

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通过 200 毫米晶圆键合采用氮化镓绝缘体技术的高频 InAlN/GaN 高电子迁移率晶体管的首次演示

通过 200 毫米晶圆键合技术，利用氮化镓绝缘体（GaNOI）技术开发出 In0.17Al0.83N/GaN 高电子迁移率晶体管（HEMT），具有良好的直流和射频性能以及高 fT/fmax。X 射线衍射和微拉曼光谱的测量结果表明，"晶格应变 "降低了 5%，从而使薄层电阻 (Rsh) 从 301 Ω □-1 提高到 284 Ω □-1。120 nm 栅极长度器件的峰值 fT 高达 96 GHz，产生的 fT × Lg 值为 11.5 GHz μm，与已报道的硅基氮化镓 HEMT 相比毫不逊色。这些结果表明，硅基 GaNOI HEMT 是未来毫米波应用的一个极具吸引力的候选器件。GaNOI 技术的实施促进了 GaN 器件与互补金属氧化物半导体技术一起集成到芯片中，为集成大功率和射频应用开辟了潜力，使系统更加紧凑高效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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physica status solidi (a)

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