Molten Glass-Mediated Conditional CVD Growth of MoS2 Monolayers and Effect of Surface Treatment on Their Optical Properties

F. G. Aras, Abdulsalam Aji Suleiman, Amir Parsi, S. Kasirga, Aydan Yeltik
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Abstract

In the rapidly developing field of optoelectronics, the utilization of transition-metal dichalcogenides with adjustable band gaps holds great promise. MoS2, in particular, has garnered considerable attention owing to its versatility. However, a persistent challenge is to establish a simple, reliable and scalable method for large-scale synthesis of continuous monolayer films. In this paper, we report the growth of continuous large-area monolayer MoS2 films using a glass-assisted chemical vapor deposition (CVD) process. High-quality monolayer films were achieved by precisely controlling carrier gas flow and sulfur vaporization with a customized CVD system. Additionally, we explored the impact of chemical treatment using lithium bistrifluoromethylsulfonylamine (Li-TFSI) salt on the optical properties of monolayer MoS2 crystals. To investigate the evolution of excitonic characteristics, we conditionally grew monolayer MoS2 flakes by controlling sulfur evaporation. We reported two scenarios on MoS2 films and flakes based on substrate-related strain and defect density. Our findings revealed that high-quality monolayer MoS2 films exhibited lower treatment efficiency due to substrate-induced surface strain, whereas defective monolayer MoS2 flakes demonstrated a higher treatment sensitivity a p-doping effect. The Li-TFSI-induced changes in exciton density were elucidated through photoluminescence (PL), Raman, and X-ray photoelectron spectroscopy (XPS) results. Furthermore, we demonstrated treatment-related healing in flakes under variable laser excitation power. The advancements highlighted in our study carry significant implications for the scalable fabrication of diverse optoelectronic devices, potentially paving the way for widespread real-world applications.
熔融玻璃介导的 MoS2 单层有条件 CVD 生长及其表面处理对光学特性的影响
在快速发展的光电子学领域,利用具有可调带隙的过渡金属二卤化物大有可为。其中,MoS2 因其多功能性而备受关注。然而,如何建立一种简单、可靠和可扩展的方法来大规模合成连续的单层薄膜一直是一个挑战。在本文中,我们报告了使用玻璃辅助化学气相沉积(CVD)工艺生长连续大面积单层 MoS2 薄膜的情况。通过使用定制的 CVD 系统精确控制载气流量和硫的气化,我们获得了高质量的单层薄膜。此外,我们还探索了使用双三氟甲基磺胺锂盐(Li-TFSI)进行化学处理对单层 MoS2 晶体光学特性的影响。为了研究激子特性的演变,我们通过控制硫的蒸发来有条件地生长单层 MoS2 薄片。我们报告了基于基底相关应变和缺陷密度的 MoS2 薄膜和薄片的两种情况。我们的研究结果表明,由于基底引起的表面应变,高质量的单层 MoS2 薄膜表现出较低的处理效率,而缺陷单层 MoS2 薄片则表现出较高的处理灵敏度和 p 掺杂效应。我们通过光致发光 (PL)、拉曼和 X 射线光电子能谱 (XPS) 结果阐明了锂-TFSI 诱导的激子密度变化。此外,我们还展示了在可变激光激发功率下薄片的治疗相关愈合。我们研究中强调的进步对可扩展地制造各种光电设备具有重要意义,有可能为广泛的实际应用铺平道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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