Effects of Strain Rate on the GND Characteristics of Deformed Polycrystalline Pure Copper

Metals Pub Date : 2024-05-16 DOI:10.3390/met14050582
Yidan Ma, Guisen Liu, Shuqing Yang, Ran Chen, Shuopeng Xu, Yao Shen
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Abstract

Geometrically necessary dislocations (GNDs) play a pivotal role in polycrystalline plastic deformation, with their characteristics notably affected by strain rate and other factors, but the underlying mechanisms are not well understood yet. We investigate GND characteristics in pure copper polycrystals subjected to tensile deformation at varying strain rates (0.001 s−1, 800 s−1, 1500 s−1, 2500 s−1). EBSD analysis reveals a non-linear increase in global GND density with the strain rate rising, and a similar trend is also observed for local GND densities near the grain boundaries and that in the grain interiors. Furthermore, GND density decreases from the grain boundaries towards the grain interiors and this decline slows down at high strain rates. The origin of these trends is revealed by the connections between the GND characteristics and the behaviors of relevant microstructural components. The increase in grain boundary misorientations at higher strain rates promotes the increase of GND density near the grain boundaries. The denser distribution of dislocation cells, observed previously at high strain rates, is presumed to increase the GND density in the grain interiors and may also contribute to the slower decline in GND density near the grain boundaries. Additionally, grain refinement by higher strain rates also promotes the increase in total GND density. Further, the non-linear variation with respect to the strain rate, as well as the saturation at high strain rates, for grain boundary misorientations and grain sizes align well with the non-linear trend of GND density, consolidating the intimate connections between the characteristics of GNDs and the behaviors of these microstructure components.
应变率对变形多晶纯铜 GND 特性的影响
几何必要位错(GNDs)在多晶体塑性变形中起着举足轻重的作用,其特征受应变速率和其他因素的显著影响,但其内在机制尚不十分清楚。我们研究了纯铜多晶体在不同应变速率(0.001 s-1、800 s-1、1500 s-1、2500 s-1)下发生拉伸变形时的 GND 特性。EBSD 分析表明,随着应变速率的增加,全局 GND 密度呈非线性增加,晶界附近的局部 GND 密度和晶粒内部的 GND 密度也呈类似趋势。此外,GND 密度从晶粒边界向晶粒内部递减,在高应变率下这种递减速度减慢。GND 特性与相关微结构成分行为之间的联系揭示了这些趋势的根源。在较高应变速率下,晶界错向的增加促进了晶界附近 GND 密度的增加。之前在高应变速率下观察到的位错单元分布更密集,据推测这增加了晶粒内部的 GND 密度,也可能导致晶界附近的 GND 密度下降更慢。此外,较高应变速率下的晶粒细化也会促进 GND 总密度的增加。此外,晶界错向和晶粒大小与应变速率的非线性变化以及高应变速率下的饱和度与 GND 密度的非线性趋势非常吻合,这巩固了 GND 特性与这些微结构成分行为之间的密切联系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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