{"title":"Control of interfacial reaction and defect formation in Gd/Bi2Te2.7Se0.3 composites with excellent thermoelectric and magnetocaloric properties","authors":"Tianchang Xue, Ping Wei, Chengshan Liu, Longzhou Li, Wanting Zhu, Xiaolei Nie, Wenyu Zhao","doi":"10.1088/1674-1056/ad4cd3","DOIUrl":null,"url":null,"abstract":"\n The core of combining thermoelectric (TE) and magnetocaloric (MC) cooling techniques lies in developing a new material possessing simultaneously large TE and MC cooling performance. In this work, using n-type Bi2Te2.7Se0.3 (BTS) as the TE base material and Gd as the second-phase MC material, Gd/BTS composites were prepared by spark plasma sintering method. In the composites, interfacial reaction between Gd and BTS was identified, resulting in a formation of GdTe, which has a large impact on electron concentration through adjusting defect concentration. The MC/TE composite containing 2.5 wt% Gd exhibited a ZT value of 0.6 at 300 K, essentially retaining the original TE performance, while all the composites largely maintained the excellent MC performance of Gd. This work provides a potential pathway to achieving high performance in MC/TE composites.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":"5 12","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Physics B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1674-1056/ad4cd3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The core of combining thermoelectric (TE) and magnetocaloric (MC) cooling techniques lies in developing a new material possessing simultaneously large TE and MC cooling performance. In this work, using n-type Bi2Te2.7Se0.3 (BTS) as the TE base material and Gd as the second-phase MC material, Gd/BTS composites were prepared by spark plasma sintering method. In the composites, interfacial reaction between Gd and BTS was identified, resulting in a formation of GdTe, which has a large impact on electron concentration through adjusting defect concentration. The MC/TE composite containing 2.5 wt% Gd exhibited a ZT value of 0.6 at 300 K, essentially retaining the original TE performance, while all the composites largely maintained the excellent MC performance of Gd. This work provides a potential pathway to achieving high performance in MC/TE composites.