In Situ Ti-Embedded SiC as Chemiresistive Nanosensor for Safety Monitoring of CO, CO2, NO, NO2: Molecular Modelling by Conceptual Density Functional Theory
IF 1.4 4区 化学Q4 PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
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引用次数: 0
Abstract
The adsorption of four CO, CO2, NO, NO2 gas molecules in the atmosphere on titanium (Ti)‑doped monolayer SiC surface was investigated using the density functional theory (DFT) with equilibrium geometries optimized at the CAM-B3LYP/6-311+G(d, p) level of theory. The thermochemical, electric and magnetic properties data recommend that the adsorption of these gas molecules on Ti-embedded SiC sheet (SiC_sh) monolayer is more energetically desired than that on the pristine ones. Gas molecules of CO, CO2, NO, NO2 have been adsorbed on the Ti site of doped SiC monolayer through the formation of covalent bonds. Moreover, after the adsorption, the orientations of the gas molecules exhibited a tendency to orient in the inclined and parallel forms to monolayer SiC_sh. The DFT analysis explored that the monolayer SiC_sh with C and Ti-doped atoms possessing one satisfied valency increased the Van der Waal interactions between the gas molecules and the monolayer SiC_sh. Furthermore, the assumption of chemical adsorptions has been approved by the projected density of states (PDOS) and charge density difference plots. Charge density difference calculations also indicate that the electronic densities were mainly accumulated on the adsorbate of CO, CO2, NO, NO2 gas molecules. The results in this investigation can indicate the competence of transition metal doped silicon carbide nanosheet in sensor devices. The overall analysis showed that the adsorption strength of monolayer SiC_sh towards the chosen gas molecules follows the order: NO2 > CO2 > NO > CO.
用于 CO、CO2、NO 和 NO2 安全监控的原位 Ti-Embedded SiC 化学电阻式纳米传感器:通过概念密度泛函理论建立分子模型
摘要 利用密度泛函理论(DFT)研究了大气中 CO、CO2、NO、NO2 四种气体分子在掺钛(Ti)单层 SiC 表面的吸附情况,并在 CAM-B3LYP/6-311+G(d,p)理论水平下优化了平衡几何结构。热化学、电学和磁学特性数据表明,这些气体分子在 Ti-embedded SiC 片(SiC_sh)单层上的吸附比在原始单层上的吸附更有能量。CO、CO2、NO、NO2 等气体分子通过形成共价键吸附在掺杂 SiC 单层的 Ti 位点上。此外,吸附后气体分子的取向呈现出向单层 SiC_sh 倾斜和平行取向的趋势。DFT 分析表明,单层 SiC_sh 中的 C 原子和掺钛原子具有一种满足的价态,这增加了气体分子与单层 SiC_sh 之间的范德华相互作用。此外,化学吸附的假设也得到了投影态密度(PDOS)和电荷密度差图的证实。电荷密度差计算也表明,电子密度主要积聚在 CO、CO2、NO 和 NO2 气体分子的吸附体上。该研究结果表明,掺杂过渡金属的碳化硅纳米片可用于传感器设备。总体分析表明,单层碳化硅纳米片对所选气体分子的吸附强度按照以下顺序排列:NO2 > CO2 > NO > CO。
期刊介绍:
Russian Journal of Physical Chemistry B: Focus on Physics is a journal that publishes studies in the following areas: elementary physical and chemical processes; structure of chemical compounds, reactivity, effect of external field and environment on chemical transformations; molecular dynamics and molecular organization; dynamics and kinetics of photoand radiation-induced processes; mechanism of chemical reactions in gas and condensed phases and at interfaces; chain and thermal processes of ignition, combustion and detonation in gases, two-phase and condensed systems; shock waves; new physical methods of examining chemical reactions; and biological processes in chemical physics.