Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, APPLIED
V. I. Nikolaev, R. B. Timashov, A. I. Stepanov, S. I. Stepanov, A. V. Chikiryaka, M. P. Shcheglov, A. Ya. Polyakov
{"title":"Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition","authors":"V. I. Nikolaev, R. B. Timashov, A. I. Stepanov, S. I. Stepanov, A. V. Chikiryaka, M. P. Shcheglov, A. Ya. Polyakov","doi":"10.1134/s1063785023010273","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Single-crystalline α-Cr<sub>2</sub>O<sub>3</sub> layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700–850°C. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800°C, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~300 arcsec.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063785023010273","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

Single-crystalline α-Cr2O3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700–850°C. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800°C, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~300 arcsec.

Abstract Image

通过超声波辅助化学气相沉积在蓝宝石基底上合成薄单晶 α-Cr2O3 层
摘要在实验室反应器中,采用超声波辅助化学气相沉积法,在 700-850°C 的温度范围内,在基底取向的蓝宝石衬底上合成了单晶 α-Cr2O3 层。通过 X 射线衍射研究了生长温度对层结构质量的影响。在 800°C 的生长温度下,获得了厚度约为 1 μm 的连续层。该层在可见光区域是透明的,略带绿色,在波长约 350 纳米的范围内有一定的透光性。反射 0006 的摇摆曲线半最大全宽约为 300 弧秒。
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来源期刊
Technical Physics Letters
Technical Physics Letters 物理-物理:应用
CiteScore
1.50
自引率
0.00%
发文量
44
审稿时长
2-4 weeks
期刊介绍: Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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