Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-14 DOI:10.1134/s1063785023900807

V. V. Lundin, S. N. Rodin, A. V. Sakharov, A. F. Tsatsulnikov, A. V. Lobanova, M. V. Bogdanov, R. A. Talalaev, Haiding Sun, Shibing Long

引用次数: 0

Abstract

Study of Ga₂O₃ deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga₂O₃ deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor.

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通过 MOVPE 在宽温度范围内从三甲基镓和氧气中沉积 Ga2O3 的研究

摘要在很宽的温度范围内，使用三甲基镓和氧气通过 MOVPE 对 Ga2O3 沉积进行了研究。研究发现，Ga2O3 沉积速率与温度的关系非常接近氮气中的三甲基镓热解。这些过程的动力学限制范围为 550-700°C，比在同一反应器中进行氮化镓沉积的温度高 150°C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.