The Features of the Layers Growth in Stressed InAs/GaSb Superlattices

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-13 DOI:10.1134/s1063785023900376

R. V. Levin, V. N. Nevedomskiy, L. A. Sokura

引用次数: 0

Abstract

The paper presents the results of a study of factors affecting the thickness of transition (interface) layers in stressed InAs/GaSb superlattices during growth by MOCVD method. It is shown that the thicknesses of the interface layers between InAs and GaSb are practically independent of the growth temperature. The thickness of the interface layers is influenced by the direction of switching the layer growth. The smallest thickness of 1.2–1.4 nm of the interface layer InAs/GaSb was obtained for the direction of growth switching from GaSb to InAs.

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应力 InAs/GaSb 超晶格中的层生长特征

摘要本文介绍了通过 MOCVD 方法生长过程中影响应力 InAs/GaSb 超晶格中过渡（界面）层厚度的因素的研究结果。研究表明，InAs 和 GaSb 之间的界面层厚度实际上与生长温度无关。界面层的厚度受层生长方向切换的影响。当生长方向从 GaSb 转换到 InAs 时，界面层 InAs/GaSb 的厚度最小，为 1.2-1.4 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.

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