Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages
IF 0.4
4区 计算机科学
Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Communications Technology and Electronics
Pub Date : 2024-03-07
DOI:10.1134/s1064226923140176
引用次数: 0
Abstract
The paper presents the results of studying the dark currents of nB(SL)n structures with a superlattice (SL) in the barrier region based on Hg1 – xCdxTe grown by molecular beam epitaxy (MBE) in a wide range of experimental conditions. Dark currents were measured in the temperature range from 11 to 300 K for mesa structures with different cross-sectional diameters. The temperature dependences of the bulk component of the dark current density and the surface leakage current density are determined. It is shown that in the studied structures the current-voltage characteristics (CVCs) are formed by both the bulk and surface components of the current depending on the temperature and bias voltage.
基于碲化镉汞的 nB(SL)n 结构在宽偏置电压范围内的暗电流分量
摘要 本文介绍了在多种实验条件下对基于分子束外延（MBE）生长的 Hg1 - xCdxTe 的势垒区具有超晶格（SL）的 nB(SL)n 结构的暗电流进行研究的结果。在 11 至 300 K 的温度范围内，对具有不同横截面直径的网格结构的暗电流进行了测量。确定了暗电流密度和表面泄漏电流密度的体积分量的温度依赖性。结果表明，在所研究的结构中，电流电压特性（CVC）是由电流的体部和表面分量形成的，这取决于温度和偏置电压。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍：
Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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