Mathematical Modeling of the Wave-Field Structure in the Vicinity of Edge Catastrophe B4

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
M. S. Domnina, A. S. Kryukovsky, D. V. Rastyagaev
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引用次数: 0

Abstract

Methods for calculating the special function of wave catastrophe B4 and its first derivatives, which describe edge focusing of the caustic-tip type with an edge, are studied. The caustic and ray structures of this singularity are constructed. The characteristic amplitude–phase sections of the special function and its derivatives are calculated. The method of rotation of the integration contour and the method of ordinary differential equations are considered and compared both in terms of accuracy and speed. It is shown that the method of ordinary differential equations works stably in the region of negative values of the first two parameters of the special function, and the method of rotation of the integration contour exhibits stability in the region of positive values. Thus, the approaches are complementary. However, the calculation time for the method of ordinary differential equations is an order of magnitude less than the time for the method of rotation of the integration contour.

Abstract Image

边缘灾难 B4 附近波场结构的数学建模
摘要 研究了波灾难 B4 的特殊函数及其一阶导数的计算方法,它描述了具有边缘的苛尖类型的边缘聚焦。构建了该奇点的苛性和射线结构。计算了特殊函数及其导数的特征振幅相位截面。考虑了积分轮廓旋转法和常微分方程法,并在精度和速度方面进行了比较。结果表明,常微分方程法在特殊函数前两个参数为负值的区域工作稳定,而积分等值线旋转法在正值区域表现稳定。因此,这两种方法是互补的。不过,常微分方程法的计算时间要比积分等值线旋转法少一个数量级。
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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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