Permissible domain walls in monoclinic ferroelectrics. Part II. The case of MC phases.

IF 1.9 4区 材料科学 Q3 CHEMISTRY, MULTIDISCIPLINARY
Ido Biran, Semën Gorfman
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引用次数: 0

Abstract

Monoclinic ferroelectric phases are prevalent in various functional materials, most notably mixed-ion perovskite oxides. These phases can manifest as regularly ordered long-range crystallographic structures or as macroscopic averages of the self-assembled tetragonal/rhombohedral nanodomains. The structural and physical properties of monoclinic ferroelectric phases play a pivotal role when exploring the interplay between ferroelectricity, ferroelasticity, giant piezoelectricity and multiferroicity in crystals, ceramics and epitaxial thin films. However, the complex nature of this subject presents challenges, particularly in deciphering the microstructures of monoclinic domains. In Paper I [Biran & Gorfman (2024). Acta Cryst. A80, 112-128] the geometrical principles governing the connection of domain microstructures formed by pairing MAB type monoclinic domains were elucidated. Specifically, a catalog was established of `permissible domain walls', where `permissible', as originally introduced by Fousek & Janovec [J. Appl. Phys. (1969), 40, 135-142], denotes a mismatch-free connection between two monoclinic domains along the corresponding domain wall. The present article continues the prior work by elaborating on the formalisms of permissible domain walls to describe domain microstructures formed by pairing the MC type monoclinic domains. Similarly to Paper I, 84 permissible domain walls are presented for MC type domains. Each permissible domain wall is characterized by Miller indices, the transformation matrix between the crystallographic basis vectors of the domains and, crucially, the expected separation of Bragg peaks diffracted from the matched pair of domains. All these parameters are provided in an analytical form for easy and intuitive interpretation of the results. Additionally, 2D illustrations are provided for selected instances of permissible domain walls. The findings can prove valuable for various domain-related calculations, investigations involving X-ray diffraction for domain analysis and the description of domain-related physical properties.

单斜铁电体中的可允许畴壁。第二部分。MC 相的情况。
单斜铁电相普遍存在于各种功能材料中,尤其是混合离子包晶氧化物。这些相可以表现为规则有序的长程晶体结构,也可以表现为自组装四方/斜方纳米域的宏观平均值。在探索晶体、陶瓷和外延薄膜中的铁电性、铁弹性、巨压电性和多铁性之间的相互作用时,单斜铁电相的结构和物理性质起着举足轻重的作用。然而,这一课题的复杂性带来了挑战,尤其是在破译单斜畴的微观结构方面。论文 I [Biran & Gorfman (2024). Acta Cryst. A80, 112-128]阐明了 MAB 型单斜畴配对形成的畴微结构连接的几何原理。特别是建立了 "可容许畴壁 "目录,其中 "可容许 "最初由 Fousek 和 Janovec [J. Appl. Phys. (1969), 40, 135-142] 提出,表示两个单斜畴沿相应畴壁的无错配连接。本文继续先前的工作,详细阐述了容许畴壁的形式,以描述 MC 型单斜畴配对形成的畴微结构。与论文 I 类似,本文介绍了 MC 型畴体的 84 个容许畴壁。每种可允许的畴壁都由米勒指数、畴的晶体学基向量之间的变换矩阵以及从匹配的一对畴中衍射出的布拉格峰的预期分离来表征。所有这些参数都以分析形式提供,便于直观地解释结果。此外,还为选定的允许畴壁实例提供了二维图解。这些发现对于各种畴相关计算、涉及畴分析的 X 射线衍射研究以及畴相关物理性质的描述都很有价值。
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来源期刊
Acta Crystallographica Section A: Foundations and Advances
Acta Crystallographica Section A: Foundations and Advances CHEMISTRY, MULTIDISCIPLINARYCRYSTALLOGRAPH-CRYSTALLOGRAPHY
CiteScore
2.60
自引率
11.10%
发文量
419
期刊介绍: Acta Crystallographica Section A: Foundations and Advances publishes articles reporting advances in the theory and practice of all areas of crystallography in the broadest sense. As well as traditional crystallography, this includes nanocrystals, metacrystals, amorphous materials, quasicrystals, synchrotron and XFEL studies, coherent scattering, diffraction imaging, time-resolved studies and the structure of strain and defects in materials. The journal has two parts, a rapid-publication Advances section and the traditional Foundations section. Articles for the Advances section are of particularly high value and impact. They receive expedited treatment and may be highlighted by an accompanying scientific commentary article and a press release. Further details are given in the November 2013 Editorial. The central themes of the journal are, on the one hand, experimental and theoretical studies of the properties and arrangements of atoms, ions and molecules in condensed matter, periodic, quasiperiodic or amorphous, ideal or real, and, on the other, the theoretical and experimental aspects of the various methods to determine these properties and arrangements.
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