An Asymptotic Preserving Discontinuous Galerkin Method for a Linear Boltzmann Semiconductor Model

Abstract

SIAM Journal on Numerical Analysis, Volume 62, Issue 3, Page 1067-1097, June 2024.
Abstract. A key property of the linear Boltzmann semiconductor model is that as the collision frequency tends to infinity, the phase space density [math] converges to an isotropic function [math], called the drift-diffusion limit, where [math] is a Maxwellian and the physical density [math] satisfies a second-order parabolic PDE known as the drift-diffusion equation. Numerical approximations that mirror this property are said to be asymptotic preserving. In this paper we build a discontinuous Galerkin method to the semiconductor model, and we show this scheme is both uniformly stable in [math], where 1/[math] is the scale of the collision frequency, and asymptotic preserving. In particular, we discuss what properties the discrete Maxwellian must satisfy in order for the schemes to converge in [math] to an accurate [math]-approximation of the drift-diffusion limit. Discrete versions of the drift-diffusion equation and error estimates in several norms with respect to [math] and the spacial resolution are also included.