Structural investigation of the quasi-one-dimensional topological insulator Bi$_4$I$_4$

C. David Hinostroza, Leandro Rodrigues de Faria, Gustavo H. Cassemiro, J. Larrea Jiménez, Antonio Jefferson da Silva Machado, Walber H. Brito, Valentina Martelli
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Abstract

The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around $T_P\sim 300$K, which separates a high-temperature $\beta$ phase ($T>T_P$) from a low-temperature $\alpha$ phase ($T
准一维拓扑绝缘体 Bi$_4$I$_4$ 的结构研究
卤化铋Bi$_4$I$_4$在$T_Psim 300$K左右发生结构转变,将高温$\beta$相($T>T_P$)与低温$\alpha$相($T
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