Magnetic Field and Temperature Dependence of the Transmission Defect Mode in One-Dimensional Photonic Crystals Containing CoSb3 and Mg2Si Layers

Abstract

The transfer matrix method (TMM) was used to investigate the tunability of the transmittance with an external magnetic field and temperature within the photonic bandgap in the terahertz range. Mg₂Si and CoSb₃ defect layers (D) were used for this in the symmetric (Si/SiO₂)^N D (SiO₂/Si)^N and asymmetric (Si/SiO₂)^N D (Si/SiO₂)^N one-dimensional photonic crystals. Using the Faraday model, different results were obtained for the responses of symmetric and asymmetric structures to magnetic fields for the right- and left-handed polarized dielectric constants. Our findings demonstrate that the defect mode is only seen in the CoSb₃-contained structure when a magnetic field between 0 and 1 T is used. For both symmetric and asymmetric Mg₂Si-contained structures, the peak was not apparent in the presence of magnetic field. The Drude model was used to analyze the temperature dependency of the defect mode for the structures mentioned above. For asymmetric and symmetric constructions, various frequencies and heights were found. The frequency of the CoSb₃ defect peak varies considerably as temperature rises from 100 to 300 K, whereas the Mg₂Si defect frequency remains unchanged. The asymmetric Mg₂Si structure at different temperatures did not exhibit any defect modes. The defect mode heights of all structures fall as the temperature rises.