Effect of optimal rapid thermal alloying of ohmic contacts to microwave pseudomorphic HEMTs

IF 1.1 4区物理与天体物理 Q3 NUCLEAR SCIENCE & TECHNOLOGY

Radiation Effects and Defects in Solids Pub Date : 2024-04-24 DOI:10.1080/10420150.2024.2318709

G. Sai Saravanan, K. Muraleedharan

引用次数: 0

Abstract

Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistors (pHEMTs) are currently used as active devices in manufacturing Monolithic Microwave Integrated Circuits (MMICs) for microwav...

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欧姆触点的最佳快速热合金化对微波伪态 HEMT 的影响

砷化镓（GaAs）伪非晶高电子迁移率晶体管（pHEMT）目前被用作制造微波炉用单片微波集成电路（MMIC）的有源器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Radiation Effects and Defects in Solids 物理-核科学技术

CiteScore

1.60

自引率

20.00%

发文量

107

审稿时长

4 months

期刊介绍： The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.