E. Papadomanolaki, A. Papangelis, M. Torris, G. Theodoratos, I. Glikiotis, C. Lambropoulos
{"title":"Two HVCMOS active pixel ASIC designs for the Measurement of GCR and SEP with a combined dynamic range of >80 dB","authors":"E. Papadomanolaki, A. Papangelis, M. Torris, G. Theodoratos, I. Glikiotis, C. Lambropoulos","doi":"10.1088/1748-0221/19/04/c04038","DOIUrl":null,"url":null,"abstract":"\n The design of HVCMOS detectors for measuring Galactic Cosmic Rays (GCR) and Solar Energetic Particles (SEP) is presented, with the goal of covering a very wide dynamic range (from ∼0.5 fC to pC). Two different pixel designs are shown, one with low gain tailored to high energy depositions and one with high gain for low energy depositions. Both designs utilize a sensing diode consisting of a fully-depleted, high resistivity substrate and a segmented deep n-well on top. LFoundry 0.15 μm technology is used. The design choices are backed by simulation results and preliminary measurements.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Instrumentation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1748-0221/19/04/c04038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The design of HVCMOS detectors for measuring Galactic Cosmic Rays (GCR) and Solar Energetic Particles (SEP) is presented, with the goal of covering a very wide dynamic range (from ∼0.5 fC to pC). Two different pixel designs are shown, one with low gain tailored to high energy depositions and one with high gain for low energy depositions. Both designs utilize a sensing diode consisting of a fully-depleted, high resistivity substrate and a segmented deep n-well on top. LFoundry 0.15 μm technology is used. The design choices are backed by simulation results and preliminary measurements.