Two HVCMOS active pixel ASIC designs for the Measurement of GCR and SEP with a combined dynamic range of >80 dB

E. Papadomanolaki, A. Papangelis, M. Torris, G. Theodoratos, I. Glikiotis, C. Lambropoulos
{"title":"Two HVCMOS active pixel ASIC designs for the Measurement of GCR and SEP with a combined dynamic range of >80 dB","authors":"E. Papadomanolaki, A. Papangelis, M. Torris, G. Theodoratos, I. Glikiotis, C. Lambropoulos","doi":"10.1088/1748-0221/19/04/c04038","DOIUrl":null,"url":null,"abstract":"\n The design of HVCMOS detectors for measuring Galactic Cosmic Rays (GCR) and Solar Energetic Particles (SEP) is presented, with the goal of covering a very wide dynamic range (from ∼0.5 fC to pC). Two different pixel designs are shown, one with low gain tailored to high energy depositions and one with high gain for low energy depositions. Both designs utilize a sensing diode consisting of a fully-depleted, high resistivity substrate and a segmented deep n-well on top. LFoundry 0.15 μm technology is used. The design choices are backed by simulation results and preliminary measurements.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Instrumentation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1748-0221/19/04/c04038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The design of HVCMOS detectors for measuring Galactic Cosmic Rays (GCR) and Solar Energetic Particles (SEP) is presented, with the goal of covering a very wide dynamic range (from ∼0.5 fC to pC). Two different pixel designs are shown, one with low gain tailored to high energy depositions and one with high gain for low energy depositions. Both designs utilize a sensing diode consisting of a fully-depleted, high resistivity substrate and a segmented deep n-well on top. LFoundry 0.15 μm technology is used. The design choices are backed by simulation results and preliminary measurements.
用于测量 GCR 和 SEP 的两种 HVCMOS 有源像素 ASIC 设计,综合动态范围大于 80 dB
介绍了用于测量银河宇宙射线(GCR)和太阳高能粒子(SEP)的 HVCMOS 探测器的设计,其目标是覆盖非常宽的动态范围(从 ∼ 0.5 fC 到 pC)。图中展示了两种不同的像素设计,一种是针对高能沉积物的低增益设计,另一种是针对低能沉积物的高增益设计。这两种设计都采用了一个传感二极管,该二极管由一个完全耗尽的高电阻率基片和一个位于顶部的分段式深 n-阱组成。采用的是 LFoundry 0.15 μm 技术。仿真结果和初步测量为设计选择提供了支持。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信