Phase Structures and Electromechanical Properties of Differently Oriented Epitaxial K0.5Na0.5NbO3 Thin Films

IF 0.5 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
Q. Li, L. Liu, Y. Ye, J.B. Lv, H. Cao, X.X. Sheng
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引用次数: 0

Abstract

An evolved nonlinear thermodynamic theory is used to investigate the phase structures and electrome-chanical properties of differently oriented K 0 . 5 Na 0 . 5 NbO 3 thin films. It is revealed that notable distinctions in the phase structure of K 0 . 5 Na 0 . 5 NbO 3 thin films, with decreasing symmetry observed in the order of (111), (001), and (110) orientations, and these microphase structural variances translate into distinct electromechanical properties. Moreover, it is observed that the oriented K 0 . 5 Na 0 . 5 NbO 3 thin films exhibit commendable out-of-plane dielectric and piezoelectric properties around the specific phase boundaries, such as M aac –O aa and Te c –PE phase boundaries for (001) oriented films, M aac –O aa and Te c –PE phase boundaries for (110) oriented films, R aaa –PE phase boundary for (111) oriented films. Specifically, near room temperature, the (001) and (110) oriented K 0 . 5 Na 0 . 5 NbO 3 thin films outperform (111) oriented K 0 . 5 Na 0 . 5 NbO 3 thin films in terms of dielectric properties, featuring a dielectric constant exceeding 2500. Furthermore, (001) oriented K 0 . 5 Na 0 . 5 NbO 3 thin films exhibit superior out-of-plane piezoelectric properties compared to other orientations, with a remarkable piezoelectric coefficient d 33 exceeding 1000 pm/V. These results underscore the significant impact of strain and temperature regulation on electromechanical properties. Meanwhile, by strategically adjusting these parameters, it becomes feasible to fabricate high-properties piezoelectric devices.
不同取向外延 K0.5Na0.5NbO3 薄膜的相结构和机电特性
该研究采用了进化的非线性热力学理论来研究不同取向的 K 0 .5 Na 0 .5 NbO 3 薄膜。研究表明,K 0 .5 Na 0 .5 NbO 3 薄膜的相结构存在明显差异,对称性依次为 (111)、(001) 和 (110) 取向,这些微相结构差异转化为不同的机电特性。此外,还观察到取向 K 0 .5 Na 0 .5 NbO 3 薄膜在特定相界周围表现出值得称道的面外介电和压电特性,例如 (001) 取向薄膜的 M aac -O aa 和 Te c -PE 相界,(110) 取向薄膜的 M aac -O aa 和 Te c -PE 相界,(111) 取向薄膜的 R aaa -PE 相界。具体来说,在室温附近,(001) 和 (110) 取向的 K 0 .5 Na 0 .5 NbO 3 薄膜的性能优于 (111) 取向的 K 0 .5 Na 0 .5 NbO 3 薄膜的介电性能,介电常数超过 2500。此外,(001) 取向 K 0 .5 Na 0 .5 NbO 3 薄膜的面外压电特性优于其他取向,其显著的压电系数 d 33 超过 1000 pm/V。这些结果凸显了应变和温度调节对机电特性的重要影响。同时,通过战略性地调整这些参数,制造高特性压电器件变得可行。
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来源期刊
Acta Physica Polonica A
Acta Physica Polonica A 物理-物理:综合
CiteScore
1.50
自引率
0.00%
发文量
141
审稿时长
6 months
期刊介绍: Contributions which report original research results and reviews in the fields of General Physics, Atomic and Molecular Physics, Optics and Quantum Optics, Quantum Information, Biophysics, Condensed Matter, and Applied Physics are welcomed.
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