Characterisation of Redlen HF-CdZnTe at > 106 ph s-1 mm-2 using HEXITECMHz

B. Cline, D. Banks, S. Bell, I. Church, A. Davis, T. Gardiner, J. Harris, M. Hart, L. Jones, T. Nicholls, J. Nobes, S. Pradeep, M. Roberts, D. Sole, M. C. Veale, M. Wilson, V. Dhamgaye, O. Fox, K. Sawhney
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Abstract

In this paper, results are presented from the characterisation of Redlen Technologies high-flux-capable Cadmium Zinc Telluride (HF-CZT) hybridised to the HEXITECMHz  ASIC, a novel 1 MHz continuous X-ray imaging system. A 2 mm thick HF-CZT HEXITECMHz detector was characterised on the B16 Test Beamline at the Diamond Light Source and displayed an average FWHM of 850 eV for monochromatic X-rays of energy 20 keV. Measurements revealed a shift in the baseline of irradiated pixels that results in a movement of the entire spectrum to higher ADU values. Datasets taken to analyse the effect's dynamics showed it to be highly localised and flux-dependent, with the excess leakage current generated equivalent to per-pixel shifts of ∼ 543 pA (8.68 nA mm-2) at a flux of 1.26×107 ph s-1 mm-2. Comparison to results from a p-type Si HEXITECMHz device indicate this `excess leakage-current' effect is unique to HF-CZT and it is hypothesised that it originates from trapping at the electrode-CZT interface and a temporary modification of the potential barrier between the CZT and metal electrode.
使用 HEXITECMHz 在大于 106 ph s-1 mm-2 的条件下对 Redlen HF-CdZnTe 进行表征
本文介绍了与新型 1 MHz 连续 X 射线成像系统 HEXITECMHz ASIC 相结合的 Redlen Technologies 高通量碲锌镉(HF-CZT)的鉴定结果。钻石光源的 B16 测试光束线对厚度为 2 毫米的 HF-CZT HEXITECMHz 探测器进行了鉴定,结果表明,对于能量为 20 千伏的单色 X 射线,其平均焦距为 850 eV。测量结果显示,辐照像素的基线发生了移动,导致整个光谱向更高的 ADU 值移动。用于分析该效应动态的数据集显示,该效应具有高度局部性和通量依赖性,当通量为 1.26×107 ph s-1 mm-2 时,产生的过量泄漏电流相当于每个像素移动 ∼ 543 pA(8.68 nA mm-2)。与 p 型硅 HEXITECMHz 器件的结果比较表明,这种 "过量漏电流 "效应是高频-CZT 所独有的,并假设它源于电极-CZT 接口处的捕获以及 CZT 与金属电极之间势垒的暂时改变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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