Review of electron emission and electrical breakdown in nanogaps

Yimeng Li, L. Ang, Bing Xiao, F. Djurabekova, Yonghong Cheng, G. Meng
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Abstract

With the continual miniaturization of electronic devices, there is an urgent need to understand the electron emission and the mechanism of electrical breakdown at nanoscale. For a nanogap, the complete process of the electrical breakdown includes the nano-protrusion growth, electron emission and thermal runaway of the nano-protrusion, and plasma formation. This review summarizes recent theories, experiments, and advanced atomistic simulation related to this breakdown process. First, the electron emission mechanisms in nanogaps and their transitions between different mechanisms are emphatically discussed, such as the effects of image potential (of different electrode's configurations), anode screening, electron space-charge potential, and electron exchange-correlation potential. The corresponding experimental results on electron emission and electrical breakdown are discussed for fixed nanogaps on substrate and adjustable nanogaps, including space-charge effects, electrode deformation, and electrical breakdown characteristics. Advanced atomistic simulations about the nano-protrusion growth and the nanoelectrode or nano-protrusion thermal runaway under high electric field are discussed. Finally, we conclude and outline the key challenges for and perspectives on future theoretical, experimental, and atomistic simulation studies of nanoscale electrical breakdown processes.
纳米间隙中的电子发射和电击穿回顾
随着电子器件的不断微型化,人们迫切需要了解纳米尺度的电子发射和电击穿机理。对于纳米间隙,电击穿的完整过程包括纳米突起的生长、电子发射和纳米突起的热失控以及等离子体的形成。本综述总结了与这一击穿过程相关的最新理论、实验和先进的原子模拟。首先,重点讨论了纳米间隙中的电子发射机制及其在不同机制间的转换,如图像电势(不同电极构型)、阳极屏蔽、电子空间电荷电势和电子交换相关电势的影响。讨论了基底上的固定纳米间隙和可调纳米间隙的电子发射和电击穿的相应实验结果,包括空间电荷效应、电极变形和电击穿特性。我们还讨论了纳米挤压生长以及高电场下纳米电极或纳米挤压热失控的高级原子模拟。最后,我们总结并概述了未来纳米级电击穿过程的理论、实验和原子模拟研究面临的主要挑战和前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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