Transmission Electron Microscope Analysis of Polycrystalline Silicon for Thin Film Solar Cells

Abstract

This research uses a transmission electron microscopy (TEM) approach to analyze the deterioration of the crystallinity of poly-Si placed on the textured substrate. On the textured substrate, we created a poly-Si photovoltaic film with a RMS roughness, σ of 64 nm. Based on TEM findings, we discovered that growth collisions are present in the poly-Si photovoltaic layer that was deposited on the textured substrate with an RMS roughness, σ of 64 nm. The growth direction of the columnar-like grains tends to be perpendicular to the slant slope of the textured substrate. The diagonally oriented columnar growth collisions may be seen clearly at V-shaped formations in the textured substrate. There are also cavities and fissures that were created by the collisions. There are also cavities and fissures that were created by the collisions. The crystallinity of poly-Si grown above the V-shape structure has worsened, as compared to poly-Si grown above the Λ-shape structure, according to the TEM and SAED pictures.