Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor

Abstract

Material selection for thermoelectric modules and generators presents a considerable challenge. In commercially available thermoelectric generators, alloys with a high percentage of doping element are used to achieve different semiconductor polarity. This introduces mechanical stresses to the system due to the varying thermal expansion rates. Previous studies have demonstrated that the semiconductor polarity of SnSe alloys can be altered through Sb or Bi doping. This paper outlines a modified, scalable and cost-effective direct synthesis process for SnSe alloys, employing Sb, Bi, Ag, Ni, In and Mg as dopants. Polarity switching in the synthesized materials was observed with Bi doping, occurring in similar regions as observed with monocrystalline Sb. Additionally, In doping led to a significant increase in the Seebeck coefficient. Doping elements exhibited minimal influence on the crystal lattice of the material, with only minor shifts in lattice parameters noted. Crystallography analysis revealed a significant preferred orientation, consistent with the material’s documented propensity to form and align in layers, a characteristic observable even to the naked eye and confirmed through optical and electron microscopy. Furthermore, we have developed and thoroughly calibrated an in-house apparatus for determining the Seebeck coefficient of thermoelectric materials, based on the already published methodology, which describes a method for determining the electrical conductivity of disk- and rod-shaped samples.