Layer-by-layer structured nanocomposite deposits from plasma-synthesized organosilicon nanoparticles and organosilicon nanoparticles decorated with Ag nanoparticles by taking advantage of cyclic nanoparticle formation in Ar/HMDSO reactive plasmas

IF 4.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Rémi Bérard, V. Garofano, Christine Joblin, Luc Stafford, Kremena Makasheva
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引用次数: 0

Abstract

Rational engineering of thin nanocomposite layers, deposited in reactive plasmas, requires knowledge on the plasma behavior in order to produce multifunctional deposits with tailored properties (structural, optical, electrical, etc.) This work presents an experimental study of nanoparticles synthesized in the plasma gas-phase and their subsequent use as building-blocks to form layer-by-layer nanostructures. The experiment is performed in a plasma process that successfully combines plasma polymerization of an organosilicon molecular precursor (hexamethyldisiloxane, HMDSO) and sputtering of a metallic (silver) target. Pulsed injection of the precursor is found to promote cyclic nanoparticle formation in Ar/HMDSO reactive plasmas. The plasma electron temperature is found to vary in the range 1.6—2.2 eV as derived from time-resolved optical emission spectroscopy of the plasma energetic conditions. This diagnostic method is also shown to provide a reliable tool for online monitoring of the nanoparticle synthesis process. Two types of layer-by-layer structured nanocomposites can be obtained depending on the type of nanoparticles synthesized: (i) organosilicon nanoparticles of size less than 100 nm in all studied plasma conditions for a large quantity of injected HMDSO and (ii) raspberry-like nanoparticles of size less than 150 nm when the quantity of injected HMDSO is reduced. The organosilicon nanoparticle growth follows a polydimethylsiloxane (PDMS)-like oligomerization scheme in which the R2-Si(-O)2 silicon bond tends towards the formation of polymeric structure in a R3-Si(-O)1 silicon chemical environment, containing Si-(CH2)-Si type bridges that are involved in cross-linking. The elemental composition of the raspberry-like nanoparticles is similar to that of the organosilicon nanoparticles, supplemented by the Ag component. The decorating silver nanoparticles are ∼15 nm of size, round in shape and polycrystalline. There is no evidence for silver oxides in the nanostructures. The Si-O-Ag bridges, revealed by infrared spectroscopy, suggest the presence of junction sites between the metallic and the organosilicon parts of the raspberry-like nanoparticles. The silver nanoparticles are found to decorate the organosilicon nanoparticles to form the raspberry-like nanoparticles in the plasma gas-phase, before being deposited. This reveals a very interesting phenomenon of simultaneous growth of the silver- and organosilicon-parts in the plasma without mixing during the nucleation phase.
利用 Ar/HMDSO 反应等离子体中循环纳米粒子形成的优势,在等离子体合成的有机硅纳米粒子和用银纳米粒子装饰的有机硅纳米粒子上形成逐层结构的纳米复合沉积物
在反应等离子体中沉积的纳米复合材料薄层的合理工程设计需要了解等离子体的行为,以便生产出具有定制特性(结构、光学、电学等)的多功能沉积物。 这项工作介绍了在等离子体气相中合成的纳米颗粒的实验研究,以及随后将其用作形成逐层纳米结构的构件。实验是在等离子工艺中进行的,该工艺成功地将有机硅分子前驱体(六甲基二硅氧烷,HMDSO)的等离子聚合与金属(银)靶的溅射结合在一起。在氩气/HMDSO 反应等离子体中,前驱体的脉冲注入可促进循环纳米粒子的形成。等离子体电子温度的变化范围为 1.6-2.2 eV,这是通过等离子体能量条件的时间分辨光学发射光谱得出的。这种诊断方法还为纳米粒子合成过程的在线监测提供了可靠的工具。根据合成的纳米粒子类型,可获得两种逐层结构的纳米复合材料:(i) 在所有研究的等离子条件下,注入大量 HMDSO 时,尺寸小于 100 nm 的有机硅纳米粒子;(ii) 注入 HMDSO 量减少时,尺寸小于 150 nm 的树莓状纳米粒子。有机硅纳米粒子的生长遵循类似聚二甲基硅氧烷(PDMS)的低聚方案,其中 R2-Si(-O)2 硅键趋向于在 R3-Si(-O)1 硅化学环境中形成聚合物结构,含有参与交联的 Si-(CH2)-Si 型桥。覆盆子状纳米粒子的元素组成与有机硅纳米粒子相似,但添加了银成分。装饰银纳米粒子大小为 15 纳米,呈圆形,多晶体。纳米结构中没有银氧化物。红外光谱显示的 Si-O-Ag 桥表明,覆盆子状纳米粒子的金属部分和有机硅部分之间存在接合点。银纳米粒子在等离子气相中装饰有机硅纳米粒子,形成覆盆子状纳米粒子,然后再沉积下来。这揭示了一个非常有趣的现象,即银和有机硅部分在等离子体中同时生长,在成核阶段不会混合。
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来源期刊
Frontiers in Nanotechnology
Frontiers in Nanotechnology Engineering-Electrical and Electronic Engineering
CiteScore
7.10
自引率
0.00%
发文量
96
审稿时长
13 weeks
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