Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation

Q4 Engineering
M. Dub, P. Sai, A. Krajewska, D. B. But, Yu. Ivonyak, P. Prystawko, J. Kacperski, G. Cywiński, S. Rumyantsev, W. Knap, M. Słowikowski, M. Filipiak
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引用次数: 0

Abstract

The grating-gate plasmonic crystal system represents a compelling arena for investigating strong light-matter interactions and diverse plasmon resonances. This study reviews the recent discovery of two distinctive terahertz phases of AlGaN/GaN plasmonic crystals that arise from varying the modulation of a two-dimensional electron density beneath the metallic gratings: the delocalized phase at weak modulation and the localized phase at strong modulation. Notably, we delve into an impact of the grating filling factor on the electrically driven transition between these phases. Our findings underscore the critical role of specific metal grating geometry parameters in facilitating this transition. Moreover, we explore the potential of utilizing graphene-based gratings as alternatives to metallic gratings. Through the integration of graphene, grown by Chemical Vapor Deposition method on copper foil and then transferred to the high electron mobility AlGaN/GaN heterostructures, we achieve an effective modulation of broadband absorption by free charge carriers within the 0.5–6 THz range via electrical biasing of the graphene electrode. However, while this approach successfully modulates absorption in a wide THz range, it does not elicit plasmon resonances within the graphene-based grating-gate plasmonic crystals. This intriguing observation poses a significant unresolved question warranting further theoretical and experimental exploration in subsequent studies.
用于太赫兹波操纵的栅栅氮化铝/氮化镓质子晶体
光栅栅极质子晶体系统是研究强光-物质相互作用和各种质子共振的一个引人注目的领域。本研究回顾了最近在氮化铝/氮化镓质子晶体中发现的两种不同的太赫兹相位,它们是通过改变金属光栅下二维电子密度的调制而产生的:弱调制时的脱局域相位和强调制时的局域相位。值得注意的是,我们深入研究了光栅填充因子对这些相位之间电驱动过渡的影响。我们的研究结果强调了特定金属光栅几何参数在促进这种转变中的关键作用。此外,我们还探索了利用石墨烯光栅替代金属光栅的潜力。我们通过化学气相沉积法在铜箔上生长石墨烯,然后将其转移到高电子迁移率的氮化铝/氮化镓异质结构上,通过石墨烯电极的电偏压,实现了对 0.5-6 太赫兹范围内自由电荷载流子宽带吸收的有效调制。然而,虽然这种方法成功地调制了宽太赫兹范围内的吸收,却没有在基于石墨烯的光栅栅极等离子晶体内引发等离子体共振。这一有趣的观察结果提出了一个重要的未决问题,值得在后续研究中进一步进行理论和实验探索。
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来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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