Crystallinity Study of Electrodeposited SnO2 on FTO Substrate

Uddipan Agasti, S. Karmakar, S. Kundu, Mili Sarkar, Sayan Chatterjee
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Abstract

Tin oxide (SnO2) holds significance as an n-type semiconductor metal oxide, finding diverse applications across various fields. It has optimal properties as a gas sensing material, fuel cells, batteries, and so on. The main objective of this research is to synthesize SnO2 thin films at a low-cost, easily replicable method and study its crystallographic properties. Here, the thin film was prepared by electrodeposition using tin sulfate, tartaric acid, and potassium nitrate at 2.1 pH followed by annealing the obtained thin film at 773 K. The whole process was conducted at 300 K without any external DC. The synthesized substrate was crystallographic properties were studied using X-ray diffraction. The average crystallite grain size was evaluated to be around 19 nm with degree of crystallinity close to 48.3%. These outcomes show that the method used to create thin films was in an appropriate direction.
FTO 基底上电沉积二氧化硒的结晶度研究
氧化锡(SnO2)作为一种 n 型半导体金属氧化物,在各个领域都有广泛的应用。它具有作为气体传感材料、燃料电池、电池等的最佳特性。本研究的主要目的是以低成本、易复制的方法合成二氧化锰薄膜,并研究其晶体学特性。在这里,薄膜是通过使用硫酸亚锡、酒石酸和硝酸钾在 pH 值为 2.1 的条件下进行电沉积制备的,然后将获得的薄膜在 773 K 下退火。用 X 射线衍射法研究了合成基底的晶体学特性。平均晶粒大小约为 19 纳米,结晶度接近 48.3%。这些结果表明,制造薄膜的方法是正确的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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