Xinxin Jiang, Zhikuan Wang, Chong Li, Xuelian Sun, Lei Yang, Dong-Xu Li, Bin Cui, Desheng Liu
{"title":"Hole doped nonvolatile and electrically controllable magnetism in van der Waals ferroelectric heterostructures","authors":"Xinxin Jiang, Zhikuan Wang, Chong Li, Xuelian Sun, Lei Yang, Dong-Xu Li, Bin Cui, Desheng Liu","doi":"10.1088/0256-307x/41/5/057501","DOIUrl":null,"url":null,"abstract":"\n Electrical control of magnetism in van der Waals semiconductors is a promising step toward developing two-dimensional ultralow-power-consumption spintronic devices for processing and storing information. Here, we propose a design for two-dimensional van der Waals heterostructures (vdWHs) that can host ferroelectricity and ferromagnetism simultaneously under hole doping. By contacting an InSe monolayer and forming an InSe/In2Se3 vdWH, the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment. Furthermore, switching between the two ferroelectric states (P↑ and P↓) of hole-doped In2Se3 with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism. More interestingly, doping concentration and strain can effectively tune the magnetic moment and polarization energy. Therefore, this provides a platform for realizing multiferroics in ferroelectric heterostructures, showing great potential in nonvolatile memories and ferroelectric field-effect transistors.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/0256-307x/41/5/057501","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Electrical control of magnetism in van der Waals semiconductors is a promising step toward developing two-dimensional ultralow-power-consumption spintronic devices for processing and storing information. Here, we propose a design for two-dimensional van der Waals heterostructures (vdWHs) that can host ferroelectricity and ferromagnetism simultaneously under hole doping. By contacting an InSe monolayer and forming an InSe/In2Se3 vdWH, the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment. Furthermore, switching between the two ferroelectric states (P↑ and P↓) of hole-doped In2Se3 with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism. More interestingly, doping concentration and strain can effectively tune the magnetic moment and polarization energy. Therefore, this provides a platform for realizing multiferroics in ferroelectric heterostructures, showing great potential in nonvolatile memories and ferroelectric field-effect transistors.
期刊介绍:
Chinese Physics Letters provides rapid publication of short reports and important research in all fields of physics and is published by the Chinese Physical Society and hosted online by IOP Publishing.