POLYIMIDE FILMS IMPLANTED BY MANGANESE IONS

S. Vabishchevich, N. Vabishchevich, D. Brinkevich, V. Prosolovich, M. Lukashevich, A. Yushchik, A. Kharchenko
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Abstract

The optical and strength properties of Kapton polyimide films implanted with manganese ions with an energy of 40 keV and a dose of 5·1016 – 1·1017 cm–2 at a current density in the ion beam of 4 μA/cm2 have been studied. It has been experimentally established that during the process of ion implantation, modification of a thin nearsurface layer of polyimide occurs not only on the implanted side, but also on the reverse side of the film. Radiationstimulated modification of the back surface of the polyimide film leads to the formation of a surface layer up to 5 μm thick with increased microhardness. This may be due to the restructuring of metastable defects formed during the film manufacturing process and the simultaneous relaxation of elastic stresses in the surface layer. During the implantation process, a decrease in the intensity of absorption bands with maxima at ~ 2870 and ~ 2750 nm is observed, due to the evaporation of residual water under high vacuum conditions and reactions of residual solvent molecules, as well as radiation-induced processes on by-products of polyimide synthesis.
锰离子植入聚酰亚胺薄膜
我们研究了用能量为 40 keV、剂量为 5-1016 - 1-1017 cm-2 的锰离子植入 Kapton 聚酰亚胺薄膜的光学和强度特性,离子束中的电流密度为 4 μA/cm2。实验证明,在离子注入过程中,聚酰亚胺近表面薄层的改性不仅发生在植入的一面,也发生在薄膜的反面。辐射刺激对聚酰亚胺薄膜背面的改性导致形成厚度达 5 μm 的表面层,并增加了微硬度。这可能是由于在薄膜制造过程中形成的可转移缺陷得到了重组,同时表层的弹性应力也得到了松弛。在植入过程中,观察到最大波长为 2870 纳米和 2750 纳米的吸收带强度下降,这是由于在高真空条件下残留水分蒸发和残留溶剂分子的反应,以及聚酰亚胺合成副产物的辐射诱导过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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