Expanding the applications of the wear-resistant titanium aluminum nitride thin-film to include temperature sensing

IF 6.7 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Science: Advanced Materials and Devices Pub Date : 2024-04-09 DOI:10.1016/j.jsamd.2024.100716

Bruno Martins , Carlos Patacas , Albano Cavaleiro , Pedro Faia , Fátima Zorro , Enrique Carbo-Argibay , Paulo J. Ferreira , Filipe Fernandes

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引用次数: 0

Abstract

This study investigates an approach to temperature sensing by integrating Titanium Aluminum Nitride (TiAlN), originally engineered for wear and corrosion applications, as a temperature sensor within a multilayered thin film system. A nitride multilayer system was developed by physical vapor deposition (PVD) using a single four-target magnetron sputtering chamber; intermediate vacuum interruption steps were employed for masking procedures. The multilayer architecture design aimed to provide the sensor layer with mechanical protection and electrical shielding. Structural and electrical characterization of the TiAlN single layer revealed semiconductor behavior and stable electrical resistance up to 750 °C, with minimal signal stabilization requirements. Despite the higher Al content, the TiAlN temperature sensor exhibited a cubic crystal structure characterized by diffuse nanolayers, resulting from a two-fold rotational deposition and target configuration. A detailed examination of the multilayer system cross-section containing the TiAlN sensor was conducted using scanning transmission electron microscopy (STEM). The analysis revealed its columnar morphology with the presence of typical PVD growth defects, including voids and droplets. While the presence of these defects may impact the electrical characteristics of the sensor, the selected experimental conditions effectively maintained the structural integrity of the multilayer system despite the vacuum interruptions caused by masking procedures. Validation experiments confirmed the functionality of the multilayer system for temperature measurements up to 400 °C. The signal acquisition system addressed room temperature resistance variations and low sensitivity (thermistor coefficient ∼100 K), resulting in a measured error of approximately 6%. This study demonstrates promising results of TiAlN as a temperature sensor within a multilayered system, expanding its range of potential applications.

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将耐磨损氮化钛铝薄膜的应用扩展到温度传感领域

本研究探讨了一种温度传感方法，即在多层薄膜系统中集成氮化钛铝（TiAlN）作为温度传感器，氮化钛铝最初是为磨损和腐蚀应用而设计的。氮化多层系统是通过物理气相沉积（PVD）技术，使用单个四靶磁控溅射室开发的；中间真空中断步骤用于掩膜程序。多层结构设计旨在为传感器层提供机械保护和电气屏蔽。TiAlN 单层的结构和电气特性分析表明，该层具有半导体特性和稳定的电阻，温度可达 750 °C，对信号稳定的要求极低。尽管铝含量较高，TiAlN 温度传感器仍表现出立方晶体结构，其特点是弥散纳米层，这是两倍旋转沉积和目标配置的结果。使用扫描透射电子显微镜（STEM）对包含 TiAlN 传感器的多层系统横截面进行了详细检查。分析表明，该系统呈柱状形态，存在典型的 PVD 生长缺陷，包括空隙和液滴。虽然这些缺陷的存在可能会影响传感器的电气特性，但所选的实验条件有效地保持了多层系统的结构完整性，尽管遮蔽程序会导致真空中断。验证实验证实了多层系统在高达 400 °C 的温度测量中的功能。信号采集系统解决了室温电阻变化和低灵敏度问题（热敏电阻系数 ∼ 100 K），测量误差约为 6%。这项研究表明，TiAlN 作为多层系统内的温度传感器具有良好的应用前景，从而扩大了其潜在的应用范围。

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来源期刊

Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

11.90

自引率

2.50%

发文量

审稿时长

47 days

期刊介绍： In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.